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Composite doped graphite material and its prepn

A composite material and graphite technology, which is applied in the field of new composite materials and its preparation, can solve the problems of unsatisfactory anti-sputtering performance and mechanical properties

Inactive Publication Date: 2002-07-10
INST OF PLASMA PHYSICS CHINESE ACAD OF SCI
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AI Technical Summary

Problems solved by technology

Monocomponent boron doping can suppress the chemical sputtering and radiation-enhanced sublimation loss of carbon-based materials to a large extent, but with the improvement of its anti-sputtering performance, the thermal conductivity of boron graphite generally decreases to that of undoped About 1 / 2; single-component titanium doping can significantly improve its thermal conductivity, but its anti-sputtering performance and mechanical properties are not satisfactory; single-component silicon-doped anti-sputtering performance is between the two, The thermal conductivity is generally reduced to 1 / 3 to 1 / 2 of that of undoped

Method used

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Examples

Experimental program
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Effect test

Embodiment

[0033] 1. Take the following components in the following parts by weight:

[0034] Green coke powder with self-sintering function 64

[0035] asphalt 25

[0036] B4C 1

[0037] Si powder 2.5

[0038] Ti powder 7.5

[0039] 2. After the raw coke powder and pitch are mixed and crushed, B4C, Si powder, and Ti powder are added to be mixed and ball-milled, screened, hot-pressed and graphitized at high temperature. In the hot pressing process, the temperature is 2200-2600°C, and the pressure is 20-30MPA. During the high-temperature graphitization treatment, the temperature is 2800-3000°C. That is, the doped graphite composite material of the present invention is obtained.

[0040] The novel doped graphite composite material prepared by the process of the invention has been successfully applied to the HT-7 superconducting tokamak device.

[0041] After installing the new-type doped graphite composite main limiter, the plasma performance of the HT-7 device has been significantly...

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Abstract

The present invention is composite doped graphite material and its preparation. It is prepared by mixing and crushing raw coke powder and asphalt with self-sintering function, adding B4C powder, Si powder and Ti powder, ball milling sieving, hot pressing to form and graphitization. Compared with high density and high strength pure graphite with thermal conductance of 70-80 W / m.K, the composite material has thermal conductance as high as 150 W / m.K, five times higher chemical sputtering resistance, raised tension strength, thermal shock resistance and vacuum performance, and excellent comprehensive performance. It may be used in large superconductive magnetic constraint fusion reactor and aeronautic and astronautic technological fields.

Description

technical field [0001] The invention relates to a novel composite material and a preparation method thereof. Background technique [0002] Due to its low atomic number (12), high melting point (4043°C), high thermal conductivity, and small neutron absorption cross-section, carbon graphite materials can still maintain a certain strength at high temperatures (<2500°C), and can be directly sublimated at high temperatures. Good thermal shock resistance and good vacuum performance can withstand the impact of abnormal events such as high energy and strong particle flow, so they are widely used in aerospace, metallurgy, semiconductors, nuclear fission reactors, etc. In order to achieve high-power and steady-state operation of a magnetic confinement fusion device, the material of the first wall of the plasma-facing component is one of the most critical research technical problems. Therefore carbon graphite material is used as the material of choice for the first wall of the fusi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/52
Inventor 陈俊凌李建刚
Owner INST OF PLASMA PHYSICS CHINESE ACAD OF SCI
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