Conductive diamond film for electrode and its preparation method
A conductive diamond and thin film technology, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of electrode performance degradation, low boron doping concentration, poor conductivity of the film, etc., and achieve good mechanical properties, Good chemical stability and good electrical stability
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[0015] Preparation process as above:
[0016] Choose silicon as the substrate, sandblast the surface of the silicon substrate and immerse it in acetone, clean it with ultrasonic waves for 5 minutes, then put it into a mixture of nano-diamond powder and general diamond powder mixed with alcohol, and use ultrasonic waves to clean it. After 20 minutes, rinse and dry with pure water and place in the deposition chamber.
[0017] Hydrogen in the reaction gas (H 2 ) and methane (CH 4 ) purity of 99.999%.
[0018] The silicon substrate was heated to 810°C and kept at 810°C throughout the growth process.
[0019] The flow rate of trimethyl borate (TMB) in the boron-doped gas source is controlled at 0.03cm 3 / min.
[0020] Hydrogen (H 2 ) flow rate is controlled at 1000cm 3 / min.
[0021] Methane (CH 4 ) flow rate is controlled at 10cm 3 / min.
[0022] The reaction pressure in the deposition chamber was controlled at 2500 Pascals (Pa).
[0023] The microwave frequency emitte...
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