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Optical readout gallium nitride group single quantum trap ultrasonic sensor

A gallium nitride monolithic and optical readout technology, applied in instruments, fluorescence/phosphorescence, analytical materials, etc., can solve problems such as unfavorable detection, large volume, and affecting detection and measurement accuracy, and achieve improved accuracy, light volume, and response time short effect

Inactive Publication Date: 2006-07-12
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI +1
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Problems solved by technology

Such ultrasonic probes made of piezoelectric crystals or piezoelectric ceramics are generally relatively large in size, which is unfavorable for the detection of special environments, and is not suitable for the miniaturization of ultrasonic probes.
In addition, ultrasonic sensors based on this working method generally directly collect piezoelectric signals generated on piezoelectric crystals or piezoelectric ceramics, so the signal acquisition circuit will inevitably affect the piezoelectric signals formed by ultrasonic waves, thereby affecting detection and measurement. the accuracy of

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  • Optical readout gallium nitride group single quantum trap ultrasonic sensor
  • Optical readout gallium nitride group single quantum trap ultrasonic sensor
  • Optical readout gallium nitride group single quantum trap ultrasonic sensor

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Embodiment Construction

[0018] Taking the GaN / InGaN / GaN single quantum well ultrasonic sensor as an example below, the specific implementation of the present invention will be further described in detail in conjunction with the accompanying drawings:

[0019] See figure 1 , the ultrasonic sensor of the present invention consists of an auxiliary light source 1, a gallium nitride-based single quantum well 2, a narrow-band filter 3 and a Si photoelectric tube 4.

[0020] The auxiliary light source 1 uses a blue light tube for InGaN, and the narrow-band filter 3 depends on the wavelength band selected in this embodiment.

[0021] GaN single quantum well 2 is grown GaN layer, InGaN layer and GaN layer sequentially on the sapphire substrate by molecular beam epitaxy technology. The thickness of the InGaN layer is related to the wavelength of the ultrasonic wave it detects, because when the ultrasonic wave propagates in this material, it will be reflected and refracted by the interface in the quantum well...

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Abstract

The invention is a kind of gallium nitride radical single quantum well supersonic sensor read optically, the sensor includes: assistant light source, gallium nitride radical single quantum well, narrow band filter piece and Si photoelectric pipe. it uses GaN radical quantum well material as sensitive elements, and the change of the piezoelectric field of the sensitive media induced by the supersonic is transformed into the change of irradiation spectrum, then the signal is collected and outputted by a photoelectric pipe. The invention analyzes the intensity of supersonic backward wave through comparing the intensities of irradiation spectrum with or without supersonic, thus completes the nature analysis of supersonic detection. The merits of the invention are: the quantum well emitting spectrum induced by the piezoelectric signal is sued as the reading signal, thus avoids the affection to the piezoelectric signal with direct reading, so it can upgrade the precision of the supersonic sensor. The sensitive elements use a kind of quantum well new material, the material is light, easy to produced into supersonic wave detector.

Description

technical field [0001] The invention relates to an ultrasonic sensor, in particular to a gallium nitride single quantum well ultrasonic sensor using optical readout. Background technique [0002] The sensitive elements of existing ultrasonic sensors mostly use single crystal materials such as quartz, potassium sodium tartrate, lithium sulfate, lithium niobate, etc., or ceramic materials such as barium titanate (BaTiO 3 ), lead titanate (PbTiO 3 ), lead zirconate titanate (Pb(Z x Ti 1-x )O 3 )Wait. And directly collect the piezoelectric signal generated by the sensitive element under the action of the ultrasonic echo, and analyze various properties of the measured object. Such ultrasonic probes made of piezoelectric crystals or piezoelectric ceramics generally have relatively large volumes, which are unfavorable for detection in special environments, and are not suitable for miniaturization of ultrasonic probes. In addition, ultrasonic sensors based on this working meth...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N35/00G01N21/64
Inventor 陆卫孙立忠李宁陈贵宾王少伟陈效双李志锋
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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