Vacuum field effect transistor

Abstract

The invention discloses a planar / vertical vacuum field effect transistor (VFT) structure, which adopts a planar or vertical structure similar to a MOSFET to improve integration and can operate at a lower operating voltage at high speed. This planar type VFT includes source and drain electrodes made of conductors, which are kept on a thin channel insulator with a predetermined distance apart, with a vacuum channel in between; gate electrodes made of conductors, which have a certain The width is formed under the source and the drain, and the function of the channel insulator is to insulate the gate from the source and the drain; the insulating body is used as a substrate for supporting the channel insulator and the gate. A vertical vacuum field effect transistor comprising: a conductive continuous circular source having a vacant center formed on a trench insulator; a conductive continuous source formed under said trench insulator and extending across said source a gate; an insulating body serving as a substrate supporting the gate and a channel insulator; an insulating wall mounted above the source to form a closed vacuum channel; a drain formed above the vacuum channel . In both types an appropriate bias is applied between the gate, source and drain to enable electrons to be field emitted from the source to the drain through the vacuum channel.

Description

technical field [0001] The present invention relates to a planar / vertical vacuum tunnel transistor. Specifically, the present invention relates to a planar / vertical vacuum tunnel transistor, which adopts a planar or vertical structure of a MOSFET to improve integration and operate at a lower operating voltage at high speed. Background technique [0002] In ordinary semiconductor devices, current conducts in the semiconductor, causing the movement speed of electrons to be affected by the crystal lattice or impurities in it. Recently, semiconductor devices including microneedle type vacuum transistors have been developed. In this type of transistor, electrons move in a vacuum, so the speed is not limited. Thus, such transistors can operate at extremely high speeds. However, their disadvantages are that they are difficult to integrate on a large scale and require high operating voltages. [0003] In order to better understand the background art of the present invention, a d...

AI Technical Summary

Problems solved by technology

Together with the high anode-gate voltage, the difficulty of fabricating such microneedles limits the practical application of these vacuum transistor structures, such as military applications.

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