Preparation method of GaN Schottky diode and GaN Schottky diode

A Schottky diode and electrode layer technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device parts, semiconductor devices, etc., can solve the problems of long cycle, high cost of terminal structure, complex process, etc., and reduce the peak value Electric field, reduced production cost, simple preparation method

Pending Publication Date: 2022-08-05
SHENZHEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method for preparing a GaN Schottky diode and a GaN Schottky diode, aiming at solving the high cost of the terminal structure used in the actual preparation process of the Schottky diode in the related art , complex process and long cycle

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  • Preparation method of GaN Schottky diode and GaN Schottky diode
  • Preparation method of GaN Schottky diode and GaN Schottky diode
  • Preparation method of GaN Schottky diode and GaN Schottky diode

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Embodiment 1

[0044] see figure 1 , in this embodiment, a preparation method of a GaN Schottky diode, comprising:

[0045] In step S10 , a GaN single crystal substrate 1 is provided, and an n-type GaN drift layer 2 is formed on the GaN single crystal substrate 1 .

[0046] Step S11, etch the side of the n-type GaN drift layer 2 away from the GaN single crystal substrate 1 to obtain a first device (such as Figure 4 shown).

[0047] Step S12, forming the diamond film layer 5 filled in the groove 21 of the first device to obtain a second device (such as a diamond terminal structure) Figure 5 shown).

[0048] Step S13, after preprocessing the second device, respectively forming an ohmic electrode layer 4 and a Schottky electrode layer 3 on both sides of the second device to obtain a GaN Schottky diode (such as Image 6 shown).

[0049] Specifically, a plurality of trenches 21 can be provided, and each trench 21 is provided at intervals; the Schottky electrode layer 3 covers part of the o...

Embodiment 2

[0051] see figure 2 Step S20 , polishing both sides of the GaN single crystal to obtain a GaN single crystal substrate 1 , and forming an n-type GaN drift layer 2 on the GaN single crystal substrate 1 .

[0052]Specifically, the two opposite sides of the GaN single crystal are ground and polished to obtain a GaN single crystal with two smooth sides, so that the subsequent GaN single crystal substrate 1 and the Schottky electrode layer 3 and the GaN single crystal substrate 1 and n The bonding between the GaN drift layers 2 is tighter, thereby improving the stability of current transfer in the GaN Schottky diode. The carrier concentration of the GaN single crystal substrate 1 is greater than 1E18cm-3, preferably 2E18cm-3, to ensure that the GaN single crystal substrate 1 has good electrical conductivity; the thickness of the GaN single crystal substrate 1 ranges from 150um- 400um, preferably 300um, so that the GaN single crystal substrate 1 can provide sufficient support stre...

Embodiment 3

[0085] see Figure 4 , Figure 5 as well as Image 6 , in this embodiment, a GaN Schottky diode, made by the above-mentioned preparation method of a GaN Schottky diode, includes a GaN single crystal substrate 1, which is stacked on one side of the GaN single crystal substrate 1 The n-type GaN drift layer 2 and the Schottky electrode layer 3, and the ohmic electrode layer 4 stacked on the other side of the GaN single crystal substrate 1, the side of the n-type GaN drift layer 2 away from the GaN single crystal substrate 1 There is a trench 21, the trench 21 is filled with a diamond film layer 5, the diamond film layer 5 forms a diamond termination structure in the n-type GaN drift layer 2, and the Schottky electrode layer 3 covers a part of the opening of the trench 21.

[0086] Specifically, two trenches 21 are provided, and the two trenches 21 are respectively provided at both ends of the n-type GaN drift layer 2 . The trenches 21 are rectangular, and the depth of the trenc...

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Abstract

The invention provides a preparation method of a GaN Schottky diode and the GaN Schottky diode, and the method comprises the steps: providing a GaN single-crystal substrate, and forming an n-type GaN drift layer on the GaN single-crystal substrate; etching the side, far away from the GaN single crystal substrate, of the n-type GaN drift layer to obtain a first device with a groove; forming a diamond film layer filled in the groove of the first device to obtain a second device with a diamond terminal structure; after the second device is preprocessed, an ohmic electrode layer and a Schottky electrode layer are formed on the two sides of the second device respectively, and the GaN Schottky diode is obtained. Compared with terminal structures such as ion implantation, a field plate structure and a metal protection ring in the prior art, the GaN Schottky diode with the diamond terminal structure not only can effectively improve the withstand voltage of a semiconductor device, reduce a peak electric field and reduce reverse electric leakage of the semiconductor device, but also can effectively dissipate heat of the semiconductor device; meanwhile, the preparation method is relatively simple, and the production cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, and particularly relates to a preparation method of a GaN Schottky diode and a GaN Schottky diode. Background technique [0002] Gallium nitride (GaN) is an important third-generation semiconductor material. Due to its superior properties such as large band gap, high breakdown electric field, high thermal conductivity, high electron saturation drift rate and strong radiation resistance, it is widely used in solid state. It has very good application prospects and potential market value in the fields of light source, power electronics, microwave radio frequency devices and so on. [0003] Diodes are the most commonly used devices in semiconductor device technology. GaN Schottky diodes have the advantages of high switching frequency and reduced forward voltage, and are widely used in circuit design and logic gate design. In related technologies, terminal structures are used to red...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329H01L29/872H01L23/373
CPCH01L29/66212H01L29/872H01L23/3732
Inventor 刘新科邹苹李博林峰吴钧烨黎晓华贺威黄双武
Owner SHENZHEN UNIV
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