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Indium-doped cobalt-MOF derivative for preparing capacitor electrode and production method of indium-doped cobalt-MOF derivative

A technology for capacitor electrodes and production methods, which is applied in the direction of hybrid capacitor electrodes, etc., can solve the problems of indium-doped cobalt-MOF derivatives, etc., and achieve the effects of improving electrochemical properties, increasing diffusion rate, and high cycle stability

Active Publication Date: 2022-07-29
LIAONING NORMAL UNIVERSITY
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  • Claims
  • Application Information

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Problems solved by technology

[0005] However, so far, there are no relevant reports on indium-doped cobalt-MOF derivatives and production methods for the preparation of capacitor electrodes

Method used

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  • Indium-doped cobalt-MOF derivative for preparing capacitor electrode and production method of indium-doped cobalt-MOF derivative
  • Indium-doped cobalt-MOF derivative for preparing capacitor electrode and production method of indium-doped cobalt-MOF derivative
  • Indium-doped cobalt-MOF derivative for preparing capacitor electrode and production method of indium-doped cobalt-MOF derivative

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Embodiment Construction

[0025] A production method of an indium-doped cobalt-MOF derivative for preparing capacitor electrodes of the present invention is carried out according to the following steps:

[0026] Step 1. Dissolve 1.6 mmol of cobalt nitrate in 80 mL of methanol and stir for 30 min, then add 0.25 mmol of indium nitrate and continue to stir for 40 min to obtain solution A;

[0027] Step 2. Dissolve the imidazole ligand in 80 mL of a liquid with a volume ratio of methanol to water of 10:1 to a final concentration of 1.0 mol L -1 , and stirred for 30min to obtain solution B;

[0028] Step 3. Quickly mix solution A and solution B, stir evenly to form solution C, seal and let stand at room temperature for 20 h;

[0029] Step 4. Centrifuge the solution C and collect the precipitate, wash it with absolute ethanol, put it into a vacuum drying oven at 80°C for drying for 20 hours, and obtain a dry powder;

[0030] Step 5. Lay the dry powder evenly into the porcelain boat, the thickness of the ti...

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Abstract

The invention discloses an indium-doped cobalt-MOF derivative for preparing a capacitor electrode, metal indium is doped in a cobalt-MOF derivative structure, and the molar ratio of cobalt ions to indium ions is (5-12): 1. A semiconductor heterostructure can be formed, a space charge region is formed on an adjacent interface of a heterogeneous semiconductor, a second-degree space characteristic is formed, internal resistance is reduced, so that the mobility of electrons is increased, the diffusion rate of the electrolyte is increased, specific capacity, impedance, an energy density value and the like are good, cycling stability is high, energy is provided for electrons consumed in a Faraday reaction, and the service life of the electrolyte is prolonged. The electrochemical property of the single transition metal oxide is effectively improved.

Description

technical field [0001] The invention relates to a capacitor electrode material and a production method, in particular to an indium-doped cobalt-MOF derivative for preparing capacitor electrodes and a production method. Background technique [0002] High-quality capacitors can meet the needs of energy storage in terms of power density and energy density at the same time, and capacitor electrode materials determine the performance of capacitors to a large extent. Compared with traditional electrode materials such as carbon-based and conductive polymers, transition metal (including binary or multi-component) oxides with porous structures have attracted more and more researchers' research interest. [0003] Li Guohua et al. prepared a ternary metal oxide electrode material by a hydrothermal method in the title "A Preparation Method of Ternary Metal Oxide Nanostructured Supercapacitor Electrode". Li Kezhi et al. reported the use of nickel foam supported oxides of zinc, cobalt an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G83/00H01G11/30
CPCC08G83/008H01G11/30Y02E60/13
Inventor 朱江魏可心杨子漪王文文郑懿馨才畅高珊珊
Owner LIAONING NORMAL UNIVERSITY
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