Method for eliminating wrinkles of two-dimensional material and application of method

A two-dimensional material and wrinkle technology, applied in the fields of nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve the problems of low success rate, low efficiency, limited application of two-dimensional materials, etc., to achieve simple operation, high efficiency, elimination of high success rate

Pending Publication Date: 2022-07-22
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the existing technology often uses annealing operation to eliminate the wrinkles of two-dimensional materials, but this method is not only inefficient, but also has a low success rate, which limits the application of two-dimensional materials in device integration.

Method used

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  • Method for eliminating wrinkles of two-dimensional material and application of method
  • Method for eliminating wrinkles of two-dimensional material and application of method
  • Method for eliminating wrinkles of two-dimensional material and application of method

Examples

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Comparison scheme
Effect test

Embodiment 1

[0055] A method for eliminating double-layer molybdenum disulfide folds, specifically comprising the following steps:

[0056] (1) Mechanically exfoliate a bilayer (about 1.3 nm in thickness) of molybdenum disulfide on dimethylsiloxane, and then transfer the bilayer molybdenum disulfide to a silicon substrate using a three-dimensional stage under an optical microscope , to obtain a double-layer molybdenum disulfide sample attached to a silicon substrate;

[0057] (2) Immerse the double-layer molybdenum disulfide sample attached to the silicon substrate obtained in step (1) in chromatographic grade absolute ethanol for 1 h with tweezers (cover the mouth of the cup with tin foil to prevent the evaporation of absolute ethanol), then Using tweezers, the double-layer molybdenum disulfide sample attached to the silicon substrate was taken out and dried by nitrogen blowing, and finally placed in a quartz tube of a vacuum tube furnace for annealing under the protection of a 1:9 mixtur...

Embodiment 2

[0061] A method for three-layer graphene folds, specifically comprising the steps:

[0062] (1) The three-layer graphene (thickness is about 1.2 nm) was mechanically exfoliated on dimethylsiloxane, and then the three-layer graphene was transferred to the silicon substrate using a three-dimensional stage under an optical microscope to obtain a bonding Three-layer graphene samples on silicon substrates;

[0063] (2) Immerse the three-layer graphene sample attached to the silicon substrate obtained in step (1) in chromatographic grade absolute ethanol for 1 h with tweezers (cover the mouth of the cup with tin foil to prevent the evaporation of absolute ethanol), and then use The three-layer graphene sample attached to the silicon nitride substrate was taken out with tweezers and dried by nitrogen blowing. Finally, it was placed in a quartz tube of a vacuum tube furnace for annealing under the protection of a 1:9 mixture of hydrogen and argon. After 2 hours of treatment, the temp...

Embodiment 3

[0067] A method for eliminating wrinkles of single-layer molybdenum disulfide, specifically comprising the following steps:

[0068] (1) Mechanically exfoliate molybdenum disulfide containing a monolayer (thickness of about 0.65 nm) on dimethylsiloxane, and then transfer the monolayer molybdenum disulfide to a molybdenum disulfide with holes under an optical microscope using a three-dimensional stage. On the silicon nitride substrate obtained, a suspended monolayer molybdenum disulfide sample attached to the silicon nitride substrate was obtained;

[0069] (2) Immerse the suspended monolayer of molybdenum disulfide attached to the silicon nitride substrate obtained in step (1) in chromatographic grade absolute ethanol for 1 h with tweezers (cover the mouth of the cup with tin foil to prevent the evaporation of the absolute ethanol) , and then use tweezers to take out the suspended monolayer molybdenum disulfide on the silicon nitride substrate and dry it with nitrogen blowing,...

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Abstract

The invention provides a method for eliminating wrinkles of a two-dimensional material and application of the method. The method comprises the steps that the two-dimensional material attached to a target substrate is soaked in an intercalation agent to be subjected to soaking treatment and annealing treatment, and elimination of the wrinkles of the two-dimensional material is completed. The method for eliminating the wrinkles of the two-dimensional material not only has the advantages of simple operation and high efficiency, but also has the advantage of little influence on the properties of the two-dimensional material; meanwhile, according to the method provided by the invention, the two-dimensional material wrinkles can be eliminated without special equipment and instruments in the operation process, the elimination success rate is very high, and a new thought is provided for realizing nondestructive transfer of the two-dimensional material.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional materials, and in particular relates to a method for eliminating wrinkles of two-dimensional materials and applications thereof. Background technique [0002] In recent years, two-dimensional transition metal chalcogenides, such as molybdenum disulfide, tungsten diselenide, etc., have shown great potential in optoelectronics, microelectronics and other applications due to their excellent physical properties. In order to fabricate large-area devices, two-dimensional transition metal chalcogenides are often prepared by chemical vapor deposition. However, the substrates of integrated devices may not be able to resist the corrosive and high temperature environment during chemical vapor growth. Therefore, two-dimensional materials need to be During the transfer from the growth substrate to the target substrate, wrinkles and cracks are quite common. However, 2D transition metal chalcogenides wit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00B82B1/00B82Y40/00
CPCB82B3/008B82B1/005B82Y40/00
Inventor 王嘉融张光杰裘晓辉
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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