Groove type silicon carbide MOSFET device and manufacturing method and application thereof

Abstract

The invention discloses a groove type silicon carbide MOSFET device and a manufacturing method and application thereof. The groove type silicon carbide MOSFET device sequentially comprises an n type silicon carbide substrate, an n type doped epitaxial layer and an n type current transmission layer from bottom to top. P-type base regions are arranged on the two sides of the top of the n-type current transmission layer respectively, adjacent double grooves are formed in the inner sides of the p-type base regions, and an n-type source region and a p-type channel region are sequentially arranged between the adjacent double grooves from top to bottom; the adjacent double grooves are filled with gates and split gates in sequence from top to bottom, and the gates and the split gates are separated through dielectric layers.

Description

technical field [0001] The present invention relates to the technical field of semiconductor devices, in particular to a trench-type silicon carbide MOSFET device and a manufacturing method and application thereof. Background technique [0002] Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), referred to as MOSFET, is a field-effect transistor that can be widely used in analog circuits and digital circuits. ). The existing silicon carbide MOSFET device is an ideal device for the inverter of new energy vehicles. It has the characteristics of low on-resistance, low heat generation, and low thermal resistance, and is gradually accepted by automobile manufacturers. [0003] Common silicon carbide MOSFETs have two types of structures: planar and trench. The planar silicon carbide MOSFET has a simple structure and is easy to prepare. However, there are several problems in the application and promotion of silicon carbide planar MOSFET devices. First, since the channel ...

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Problems solved by technology

Second, in the planar silicon carbide MOSFET structure, the existence of the JFET region makes it have a high JFET resistance, which limits the performance of the device

Third, under the same short-circuit current density, planar SiC MOSFET devices produce more concentrated heat and are more prone to short-circuit failure

[0004] Compared with planar MOSFET devices, conventional trench silicon carbide MOSFET devices also have reliability problems caused by the easy breakdown of trench gate oxide protection. The large gate-drain capacitance Cgd of trench devices also makes trench silicon carbide The characteristics of MOSFET devices are limited

These issues limit the application of trench SiC MOSFETs

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