Heterojunction semiconductor device thermal resistance measuring circuit and method

Abstract

The invention discloses a heterojunction semiconductor device thermal resistance measuring circuit and a method thereof. The circuit comprises a signal generation module, a driving module, a device to be measured, a controllable load module, a constant temperature device, a data acquisition module and a power supply module. And the change rate of the leakage current along with time in the working thermal stable state of the heterojunction semiconductor device is extracted as the reference of the junction temperature, so that the thermal resistance value of the heterojunction semiconductor device in the working thermal stable state is calculated. Wherein the circuit can be switched between a normal working mode and a measurement mode by regulating and controlling the controllable load module. The normal working mode is used for enabling the to-be-tested device to be in a thermally stable working state; the measurement mode is used for extracting the leakage current change rate of the to-be-measured device so as to calculate the thermal resistance.

Description

technical field [0001] The invention mainly relates to the field of reliability circuits and measurement of high-voltage power semiconductor devices, in particular to a measurement circuit and measurement method of thermal resistance of a heterojunction semiconductor device. Background technique [0002] With the emergence of third-generation semiconductor materials in the field of electronic power technology with their excellent performance, heterojunction semiconductor devices have received more and more attention. Among them, wide-bandgap heterojunction semiconductor materials rely on their excellent breakdown The performance of voltage and electron mobility has shown enough competitiveness in switching power supply, power control and other fields. However, compared with its own advantages, the thermal conductivity of wide-bandgap heterojunction semiconductor devices has become its own drawback. Studies have shown that most of the failures of power devices are related to...

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Problems solved by technology

In general, the input power of the device and the temperature of the package case when the device is working are relatively easy and accurate to measure, but it is difficult to obtain the junction temperature of the device during normal operation.

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