Silicon carbide crystal ingot growth device and method

Abstract

The invention discloses a silicon carbide crystal ingot growing device, and relates to the technical field of silicon carbide crystal ingots, the silicon carbide crystal ingot growing device comprises a cylinder body, a heating liner is arranged in the cylinder body, and a cover body is arranged on the upper part of the cylinder body; a plurality of feeding pipes are arranged on the barrel in a penetrating manner, one end of each feeding pipe penetrates through the heating inner container and extends into the heating inner container, and a crucible is fixed to the end of each feeding pipe; the plurality of crucibles are arranged in the heating inner container to form an inverted heap-shaped structure; each feeding pipe is connected with a material storage box, and a feeding mechanism is arranged between each material storage box and the corresponding feeding pipe; a rotatable silicon carbide crystal ingot growth plate is arranged below the cover body, and a cooling tank is arranged above the silicon carbide crystal ingot growth plate. The invention further provides a method for growing the silicon carbide crystal ingot. The silicon carbide crystal ingot grows in a sublimation mode between silicon carbide and a doping substance. According to the invention, the silicon carbide and the dopant can be synchronously sublimated and mixed in a three-dimensional distribution manner, the semi-insulating silicon carbide crystal ingot with more uniform doping concentration is generated, and the quality of the semi-insulating silicon carbide crystal ingot is improved.

Description

technical field [0001] The invention belongs to the technical field of silicon carbide crystal ingots, and in particular relates to a silicon carbide crystal ingot growing device and method. Background technique [0002] Silicon carbide is widely used in industrial production due to its advantages of stable chemical properties, high thermal conductivity, small thermal expansion coefficient, and good wear resistance to improve product wear resistance and prolong service life. The semi-insulating silicon carbide ingot obtained by doping has the advantages of maximum breakdown voltage (break field voltage) and thermal conductivity (thermal conductivity), and is a more excellent material for next-generation semiconductor devices. In the preparation of silicon carbide ingots, a method of mixing and synthesizing dopants and silicon carbide is generally used to prepare semi-insulating silicon carbide ingots. [0003] But due to the different sublimation temperature of dopant and s...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the shortcomings of non-uniform doping of semi-insulating silicon carbide crystal ingots produced by mixing dopants with silicon carbide and synthesis methods in the prior art, and propose a silicon carbide crystal ingot growth device

Images