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WSe2 sheet with controllable growth and preparation method and application thereof

A flake, wse2 technology, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of unresearched performance, lack of controllability and repeatability of growth conditions and overlapping layers, single shape of WSe2, etc. Greater controllability and repeatability, broadening the effect of shape studies

Active Publication Date: 2022-07-08
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Also, for overlapping WSe 2 The growth of is more of an accidental situation, that is, the growth overlaps WSe 2 Growth conditions and number of overlapping layers lack controllability and reproducibility when
Therefore, this will make the grown WSe 2 The shape is single, lacking a certain richness, and there may be no related research on performance

Method used

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  • WSe2 sheet with controllable growth and preparation method and application thereof
  • WSe2 sheet with controllable growth and preparation method and application thereof
  • WSe2 sheet with controllable growth and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A kind of WSe with 1T crystal phase monolayer 2 flakes, such as figure 1 shown, the WSe 2 The flakes have an equilateral triangle of 1T crystal phase, which are the substrate 1 and the 1T crystal phase layer 2 in order from bottom to top. Its preparation includes the following steps:

[0035] 1. The 300nm SiO 2 / Si wafers were split into substrates with a size of 1cm×1cm, and then the substrates were ultrasonically cleaned with acetone, anhydrous ethanol, and deionized water for 5 min respectively, then soaked and rinsed with deionized water, and finally blown with a nitrogen gun. Dry storage.

[0036] 2. Put 1.5~2.0g of WSe 2 The powder (purity 99.99%) is placed in a clean quartz boat A, and the quartz boat A is placed in the middle of the hot zone of the tube furnace; The quartz boat B is placed at a downstream position of the airflow 13 cm from the middle of the hot temperature zone.

[0037] 3. Change the airflow direction from forward ventilation (WSe 2 The...

Embodiment 2

[0041] A kind of WSe with 1T crystal phase monolayer 2 flakes, such as figure 1 As shown, the substrate 1 and the 1T crystal phase layer 2 are sequentially included from bottom to top. The 1T crystal phase monolayer of WSe 2 The preparation of the flakes includes the following steps:

[0042] 1. The 300nm SiO 2 / Si wafers were split into substrates with a size of 1cm×1cm, and then the substrates were ultrasonically cleaned with acetone, anhydrous ethanol, and deionized water for 5 min respectively, then soaked and rinsed with deionized water, and finally blown with a nitrogen gun. Dry storage.

[0043] 2. Put 1.5~2.0g of WSe 2 The powder is placed in a clean quartz boat, and the quartz boat is placed in the middle of the hot temperature zone of the tube furnace; then the substrate is placed up and flat in another clean quartz boat, and the quartz boat is placed at a distance 14cm downstream of the airflow in the middle of the hot temperature zone.

[0044] 3. Change the...

Embodiment 3

[0048] A bilayer overlapped WSe with 1T crystal phase 2 flakes, such as Figure 4 shown, the WSe 2 The flakes have two overlapping equilateral triangles of 1T crystal phase, but different sizes, which are substrate 1, 1T crystal phase layer 2 and 1T crystal phase layer 3 in order from bottom to top. Its preparation includes the following steps:

[0049] 1. The 300nm SiO 2 / Si wafers were split into substrates with a size of 1cm×1cm, and then the substrates were ultrasonically cleaned with acetone, anhydrous ethanol, and deionized water for 5 min respectively, then soaked and rinsed with deionized water, and finally blown with a nitrogen gun. Dry storage.

[0050] 2. Put 1.5~2.0g of WSe 2 The powder is placed in a clean quartz boat A, and the quartz boat A is placed in the middle of the hot temperature zone of the tube furnace; then the substrate is placed in a clean quartz boat B, and the quartz boat B is placed The downstream position of the airflow 13cm from the middle...

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Abstract

The invention belongs to the technical field of transition metal chalcogenide two-dimensional materials, and discloses a growth-controllable WSe2 sheet and a preparation method and application thereof. The method comprises the following steps: enabling argon flow to flow to the direction of WSe2 powder from a SiO2 / Si substrate, adjusting the pressure, reducing the speed of the argon flow to 30-50sccm, simultaneously raising the temperature to 1100-1130 DEG C, reducing the speed of the argon flow to 0sccm, changing the direction of the argon flow to flow to the SiO2 / Si substrate from the WSe2 powder, raising the speed of the argon flow to 100-130sccm, growing for 8-15 minutes at the temperature of 1100-1130 DEG C, and cooling to the room temperature under the condition of ventilation to obtain the WSe2 sheet with controllable growth. Controllable growth of the WSe2 sheet is realized by controlling the reaction time and the gas flow rate, so that the WSe2 has different crystal phases and layer numbers, and possibility is provided for preparing a novel photoelectric detector.

Description

technical field [0001] The invention belongs to the technical field of transition metal chalcogenide (TMDs) two-dimensional material growth, and more particularly, relates to a controllable growth of WSe 2 Flakes and methods of making and using the same. Background technique [0002] In transition metal chalcogenides, the crystals generally have three phases: 1T-triangular, 2H-regular hexagonal and 3R-rhombic. WSe 2 As one of the two-dimensional materials of TMDs, the most common crystal phases of the grown materials are 1T-triangle and 2H-regular hexagon. The growth technology usually uses vapor deposition to grow materials. Vapor deposition refers to heating the precursor to a gas. Chemical vapor deposition is a technique for depositing synthetic coatings, thin films or nanomaterials on the surface of a substrate by using physical and chemical reactions that occur in the gas phase. It is divided into physical vapor deposition (PVD) and chemical vapor deposition (CVD). A...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/46G01N21/84
CPCC30B23/002C30B29/46G01N21/84G01N2021/8461Y02P70/50
Inventor 罗中通郑照强
Owner GUANGDONG UNIV OF TECH
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