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Magnetic memory cell and magnetic memory

A magnetic storage and magnetic technology, applied in the field of storage, can solve the problem of incompatibility between read and write performance device volume and data storage time, and achieve the goal of maintaining a high tunnel magnetoresistance change rate, increasing data storage time, and prolonging data storage time Effect

Pending Publication Date: 2022-07-01
ZHEJIANG HIKSTOR TECHOGY CO LTD
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Problems solved by technology

[0005] The purpose of the present invention is to provide a magnetic storage unit and a magnetic memory to solve the problems in the prior art that read and write performance, device volume and data storage time cannot be achieved at the same time

Method used

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  • Magnetic memory cell and magnetic memory
  • Magnetic memory cell and magnetic memory
  • Magnetic memory cell and magnetic memory

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Embodiment approach

[0043] As a preferred embodiment, the lower edge of the high conductive layer 500 is not higher than the oxide interface layer 311 of the second memory structure unit 310 ; Two nearest storage structure units 310 . Of course, the lower the lower edge of the highly conductive layer 500 is, which means that the more structures of the magnetic free layer 300 covered by the highly conductive layer 500 are, the lower the total resistance of the magnetic free layer 300 is. memory performance.

[0044] Specifically, the number of the storage structure units 310 ranges from 2 to 5, including the endpoint value, such as any one of 2.0, 3.0, or 5.0. Of course, the corresponding selection can also be made according to the actual situation.

[0045]In addition, the thickness of the oxide interface layer 311 ranges from 0.5 nanometers to 1 nanometer, inclusive, such as any one of 0.50 nanometers, 0.79 nanometers, or 1.00 nanometers; the thickness of the oxide interface layer is thin enoug...

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Abstract

The invention discloses a magnetic storage unit. The magnetic storage unit sequentially comprises a magnetic reference layer, a tunnel layer, a magnetic free layer and a cap layer from bottom to top, the magnetic free layer comprises a plurality of storage structure units; each storage structure unit sequentially comprises a first ferromagnetic layer, a non-magnetic metal spacer layer, a second ferromagnetic layer and an oxide interface layer from bottom to top; the side wall of the magnetic free layer is covered with a high conductive layer, the upper edge of the high conductive layer is in conductive contact with the cap layer, and the lower edge of the high conductive layer is not lower than the oxide interface layer of the first storage structure unit; the lower edge of the high conductive layer is not in contact with the second ferromagnetic layer of the first storage structure unit. According to the invention, the multilayer storage structure units are in short-circuit connection, the ratio of series resistance generated by lamination to the total resistance of the magnetic tunnel junction is reduced, the total resistance of the magnetic tunnel junction is reduced, and the data storage time is prolonged. The invention also provides a magnetic memory.

Description

technical field [0001] The present invention relates to the technical field of storage, in particular to a magnetic storage unit and a magnetic memory. Background technique [0002] Current-read and write magnetic random access memory (STT-MRAM) is a new type of memory with great potential. Different from other existing types of memory, magnetic random access memory has considerable storage capacity and read and write speed. However, to replace or partially replace the existing mainstream memory, it also faces a problem that traditional memory has not faced, namely magnetic memory. The data storage time is limited. For the consideration of data security, if the magnetic random access memory is to be put into use, the storage time of the memory needs to be further extended. [0003] In the prior art, in order to increase the data retention time, the size of the storage bit can be increased, and the physical diameter of the magnetic memory can be increased to reduce the stora...

Claims

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Application Information

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IPC IPC(8): G11C11/16
CPCG11C11/165G11C11/16
Inventor 韩谷昌张恺烨申力杰杨晓蕾刘波
Owner ZHEJIANG HIKSTOR TECHOGY CO LTD
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