Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Mask defect detection device, mask defect detection system and photoetching machine system

A technology of defect detection and lithography machine, applied in measuring devices, material analysis through optical means, instruments, etc., can solve the problems of speckle on the imaging plane and affect the imaging quality, so as to avoid speckle, improve imaging quality, The effect of increasing productivity

Pending Publication Date: 2022-05-31
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to at least solve the problem that coherent extreme ultraviolet light will generate speckle on the imaging plane and affect the imaging quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mask defect detection device, mask defect detection system and photoetching machine system
  • Mask defect detection device, mask defect detection system and photoetching machine system
  • Mask defect detection device, mask defect detection system and photoetching machine system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure will be more thoroughly understood, and will fully convey the scope of the present disclosure to those skilled in the art.

[0031]It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting. As used herein, the singular forms "a," "an," and "the" can also be intended to include the plural forms unless the context clearly dictates otherwise. The terms "comprising", "comprising", "containing" and "having" are inclusive and thus indicate the presence...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a mask defect detection device, a mask defect detection system and a photoetching machine system, and the mask defect detection device comprises a housing which is internally provided with a vacuum cavity; the mask is arranged in the vacuum cavity; the plane mirror is arranged in the vacuum cavity and located on one side of the mask, and the plane mirror is used for reflecting the extreme ultraviolet light beams and enabling the extreme ultraviolet light beams to vertically irradiate the mask; the de-coherence reflection assembly is arranged in the vacuum cavity, and the de-coherence reflection assembly is used for de-coherence of the extreme ultraviolet light beam emitted into the vacuum cavity and then reflecting the extreme ultraviolet light beam to the plane mirror; the imaging device is provided with an imaging plane; the reflected light collecting device is used for collecting the extreme ultraviolet light beams reflected by the defects on the mask and outputting the extreme ultraviolet light beams to the imaging plane, and bright spots are generated on the imaging plane. According to the mask defect detection device provided by the invention, extreme ultraviolet light which is generated by a novel particle accelerator EUV light source and has relatively high output power can be adopted, so that the yield of mask defect detection is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor lithography, and in particular, to a mask defect detection device, a mask defect detection system and a lithography machine system. Background technique [0002] This section provides merely background information related to the present disclosure and is not necessarily prior art. [0003] EUV (Extreme Ultra-violet) lithography is the most promising technical means to meet the technology nodes of 7nm and below. In the semiconductor manufacturing process, EUV mask technology is considered to be one of the most critical technologies for the successful realization and development of EUV lithography. Since EUV light is strongly absorbed by most materials, reflective optics, including masks, must be used in the light path. Therefore, unlike conventional photolithography masks, EUV masks employ a multilayer film structure. The EUV mask preparation process is very complicated, and defect...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/01G01N21/958
CPCG01N21/01G01N21/958
Inventor 沙鹏飞吴晓斌王魁波马翔宇尹皓玉方旭晨谢婉露李慧韩晓泉罗艳马赫谭芳蕊
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com