Semiconductor structure and manufacturing method thereof

Abstract

The embodiment of the invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate; the first electrode is located on the substrate, and a through hole extending in the direction away from the substrate is defined by the first electrode; the second electrode is at least located in the through hole; the capacitor dielectric layer is located between the first electrode and the second electrode, and the second electrode, the capacitor dielectric layer and the first electrode form a capacitor structure; the transistor is located on the capacitor structure and comprises a first doped region and a second doped region which are arranged at an interval in the direction perpendicular to the surface of the substrate, the first doped region is electrically connected with the second electrode, and the doping type of the first doped region and the second doped region is one of an N type and a P type; the doping types of the first doped region and the second doped region are the same; and the bit line is positioned on the transistor and is electrically connected with the second doped region. The embodiment of the invention is at least beneficial to improving the performance of the semiconductor device and reducing the difficulty of a manufacturing process.

Description

technical field [0001] Embodiments of the present disclosure relate to the technical field of semiconductors, and in particular, to a semiconductor structure and a method for manufacturing the same. Background technique [0002] With the development of semiconductor technology, the manufacture of semiconductor devices with better performance and higher integration has become the main direction pursued in the semiconductor processing process. [0003] However, the manufacturing process of the smaller-sized semiconductor device is complex, and the performance of the processing equipment is extremely required, and it is difficult to realize the method of improving the processing accuracy by improving the performance of the processing equipment. [0004] Therefore, improving the layout and formation method of the semiconductor device structure is an effective way to make the semiconductor device meet the requirements of better performance and smaller size while reducing the proc...

AI Technical Summary

Problems solved by technology

[0003] However, the manufacturing process of smaller semiconductor devices is complex, and the performance requirements of processing equipment are extremely high, and it is difficult to improve the performance of processing equipment to improve processing accuracy.

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