Monolithic heterogeneous integrated structure of top-layer p-type diamond MOSFET and GaN HEMT and preparation method of monolithic heterogeneous integrated structure

Abstract

The invention discloses a top-layer p-type diamond MOSFET and GaN HEMT monolithic heterogeneous integrated structure and a preparation method thereof, and the method comprises the steps: providing an epitaxial product, and sequentially growing a SiN dielectric layer and a p-type diamond layer on the surface of one side, far away from a substrate, of an AlGaN barrier layer; after part of the p-type diamond layer is removed through etching, a source electrode groove and a drain electrode groove are etched in the SiN dielectric layer, and a first source electrode and a first drain electrode of the HMET device are manufactured; manufacturing a second source electrode and a second drain electrode of the MOSFET device on the surface of the p-type diamond layer; depositing Al2O3 on the surface of the p-type diamond layer to form a gate dielectric layer; and manufacturing a second gate electrode on the surface of the gate dielectric layer to form a monolithic heterogeneous integrated structure of the top p-type diamond MOSFET and the GaN HEMT. The size of the device is reduced, and the integration level of the device is improved; and meanwhile, the heat generation distribution of the GaN HEMTs is modulated, and the heat dissipation capability of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a top layer p-type diamond MOSFET and a GaN HEMT monolithic hetero-integrated structure and a preparation method thereof. Background technique [0002] In recent years, due to the advantages of the third-generation semiconductor material GaN, such as wide band gap, high breakdown electric field and high electron saturation velocity, it has unique advantages in high-frequency and high-power fields such as military, aerospace, and communications. However, when the ultra-high integration of semiconductor devices and GaN-based devices are used in high-frequency fields, the accompanying high heat generation phenomenon cannot be ignored. In severe cases, the device may fail. [0003] The thermal conductivity of GaN itself is only 130 W / (m·K) (W / m·Kelvin). Currently, the commonly used substrates for GaN HEMTs mainly include SiC substrates, Si substrates, and sapphire...

AI Technical Summary

Problems solved by technology

Among them, even if the SiC substrate with high thermal conductivity is used, its heat dissipation performance is far from meeting the application of GaN effect tubes in the microwave high-power field.

In addition, the current maximum operating temperature of silicon-based MOSFET devices in logic circuits is 125°C. The electrical performance of silicon-based devices exceeding this operating temperature will be greatly degraded or even completely invalid, while the operating temperature of devices used in high-frequency and high-power fields is much higher. at 125°C

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