Etching solution, preparation method thereof and metal film processing method

Abstract

The invention provides an etching solution, a preparation method thereof and a treatment method of a metal film material. The etching liquid comprises the following components in parts by weight: 50-80 parts of phosphoric acid, 1-10 parts of nitric acid, 10-30 parts of acetic acid, 0.01-1 part of a metal corrosion inhibitor, 0.01-1 part of a surfactant and the balance of water. The surface active agent comprises nonylphenol polyoxyethylene ether and fatty alcohol polyoxyethylene ether sulfate; the metal corrosion inhibitor comprises at least one of potassium acetate, lignin sulfonate, phosphonic carboxylic acid and mercapto benzothiazole. The etching liquid is high in controllability, good in etching uniformity, smooth in etching angle and high in precision, etching of materials can be completed within a short time, the critical dimension loss of the etched metal film is smaller than 0.5 micron, the etching angle is smaller than 60 degrees, and no residues exist on the surface of a glass panel. And the etching requirements of an aluminum film, an aluminum alloy film, a molybdenum film, a molybdenum alloy film, and a molybdenum-aluminum laminated film, an aluminum-molybdenum-aluminum laminated film and a molybdenum-aluminum-molybdenum laminated film which are laminated in different thicknesses can be met at the same time.

Description

technical field [0001] The present application relates to the field of chemical etching, in particular to an etching solution, a preparation method thereof, and a metal film treatment method. Background technique [0002] At present, chemical etching is often used in the industry to etch the metal film layer containing aluminum or molybdenum to obtain the gate, source, drain, etc. of a thin display with a certain pattern. Among them, due to the different chemical properties of aluminum and molybdenum, there are differences in their respective etching rates during the chemical etching process, resulting in poor etching uniformity, which in turn leads to certain differences between the obtained actual pattern and the pre-designed pattern. In addition, chemical etching is isotropic, and the etched film layer is very prone to side erosion, which makes it difficult to control the line width and angle of etching, and poor etching accuracy will also affect. Contents of the invent...

AI Technical Summary

Problems solved by technology

Among them, due to the different chemical properties of aluminum and molybdenum, there are differences in their respective etching rates during the chemical etching process, resulting in poor etching uniformity, which in turn leads to certain differences between the actual pattern obtained and the pre-designed pattern

In addition, chemical etching is isotropic, and the etched film layer is prone to side erosion, which makes it difficult to control the line width and angle of etching, and the poor etching accuracy will also affect

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