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Contact electrode preparation method, Mico-LED array device and preparation method thereof

A technology of contact electrodes and arrays, which is applied in the field of Micro-LEDs, can solve the problems of inhomogeneous polycondensation of indium contact electrodes, large deviation, height of indium ball bumps, and uneven shape and size, and achieve uniform shape, reduced short circuit, and uniform size Effect

Pending Publication Date: 2022-04-29
SHENZHEN SITAN TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the prior art, during the reflow process of the indium contact electrodes, the indium contact electrodes cannot be polycondensed into indium ball bumps, or the indium contact electrodes are not uniformly polycondensed, and the indium contact electrodes are prone to climbing and forming whiskers, etc. The above factors make the height, shape and size of the indium ball bumps obtained after reflow uneven, and the deviation is large. Refer to figure 1 and figure 2 as well as Figure 5 and Image 6 , thus affecting the effective connection between the contact electrode and the electrode of the drive circuit board, and prone to problems such as short circuit and virtual soldering

Method used

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  • Contact electrode preparation method, Mico-LED array device and preparation method thereof
  • Contact electrode preparation method, Mico-LED array device and preparation method thereof
  • Contact electrode preparation method, Mico-LED array device and preparation method thereof

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preparation example Construction

[0033] reference Figures 11 to 14 , the present invention discloses a method of preparing an electrode, comprising the following steps:

[0034] Step 1: The Micro-LED array substrate 100 is provided, the contact electrode 200 position of the Micro-LED array substrate 100 is formed at the indium body layer 210.

[0035] Step 2: A metal protective layer 220 is formed on the indium body layer 210.

[0036] Step 3: The indium body layer 210 and the metal protective layer 220 are refluxed to obtain a contact electrode 200.

[0037] The present invention by providing a metal protective layer 220, a metal protective layer 220 for indium main layer 210 is isolated from air before reflux, protecting the indium main layer 210 from oxidation, avoiding the formation of an oxide layer affecting the effect of reflux into a ball, and protecting the indium main layer 210 during the reflux process does not occur climbing and forming whiskers, and to avoid evaporation and volatilization of the indi...

Embodiment 1

[0056]Micro-LED array substrate 100 may be prepared using any available method, reference Figures 9 to 16 In the present embodiment, the micro-LED array substrate 100 preparation method comprises the following steps:

[0057] Step S11: Refer to Figure 9 , in turn growing epitaxial flakes on the substrate 110, the epitaxial flakes comprise an N-type layer 1211, an active layer 1212 and a P-type layer grown sequentially on the substrate 110, in this particular embodiment, in order to improve the growth quality of the epitaxial flakes, before forming an epitaxial flake, further comprising the process of growing a buffer layer 150 on the substrate 110. In the present embodiment, in order to improve the growth quality of the epitaxial flakes, there is also a layer of u-GaN layer 160 growing above the buffer layer 150.

[0058] The material of the substrate 110 may be sapphire or silicon carbide, etc., in the present embodiment, the material of the substrate 110 is a sapphire transpare...

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Abstract

The invention discloses a preparation method of a contact electrode, a Micro-LED array device and a preparation method of the Micro-LED array device, and the preparation method of the contact electrode comprises the following steps: providing a Micro-LED array substrate, and forming an indium main body layer at the position of the contact electrode of the Micro-LED array substrate; forming a metal protection layer on the indium main body layer; and performing backflow on the indium main body layer and the metal protection layer to obtain the contact electrode. The prepared contact electrode is uniform in height, shape and size and small in deviation, and the probability of short circuit and pseudo soldering in the electrode connection process of the contact electrode and the driving circuit board is reduced.

Description

Technical field [0001] The present invention relates to the field of Micro-LED technology, more particularly, to a method of preparation of contact electrodes, Mirco-LED array devices and preparation methods thereof. Background [0002] Micro-LED based on the third generation of wide bandgazing semiconductor GaN material has the characteristics of self-illumination, low power consumption, high brightness, high contrast, high resolution, etc. Micro-LED array devices have a high-density pixel array as a display (that is, a high-density Micro-LED unit array, each Micro-LED unit represents a pixel), and the single pixel size (that is, a single Micro-LED unit) is often tens of microns or even several microns. This kind of display can be applied to AR, VR, MR, micro projection or wearable devices with high resolution and brightness requirements, and can even combine lighting and display into one, with high commercial application value and considerable development prospects. [0003] B...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/36H01L33/44H01L27/15
CPCH01L33/005H01L33/36H01L33/44H01L27/156H01L2933/0016H01L2933/0025
Inventor 黄炳铨张珂吴涛
Owner SHENZHEN SITAN TECH CO LTD
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