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Preparation method of two-dimensional rhenium sulfide-molybdenum sulfide vertical heterostructure

A heterogeneous structure, rhenium sulfide technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effect of low cost and simple method

Pending Publication Date: 2022-04-29
HANGZHOU DIANZI UNIV
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  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the preparation of two-dimensional rhenium sulfide / molybdenum sulfide vertical heterostructures with rhenium sulfide as the bottom layer and molybdenum sulfide as the top layer by one-step chemical vapor deposition has not yet been reported.

Method used

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  • Preparation method of two-dimensional rhenium sulfide-molybdenum sulfide vertical heterostructure
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  • Preparation method of two-dimensional rhenium sulfide-molybdenum sulfide vertical heterostructure

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Embodiment 1

[0031] A preparation method of two-dimensional rhenium sulfide-molybdenum sulfide vertical heterostructure, using chemical vapor deposition method, with Si / SiO 2 For the deposition substrate, metal rhenium foil is used as rhenium source, and metal molybdenum foil is used as molybdenum source, which is prepared by reacting with sulfur source sulfur powder. Its preparation is carried out in a double-temperature zone horizontal tube furnace, and the schematic diagram of the device is shown in figure 1 As shown, wherein, temperature zone 1 is a sulfur source temperature zone, and temperature zone 2 is a deposition temperature zone, specifically including the following preparation steps:

[0032] S1. Choose Si / SiO that does not contain catalyst and seed layer 2 Substrate, the size of the substrate is 1cm×2cm.

[0033] S2. The double-temperature-zone horizontal tube furnace is sequentially set as the sulfur source temperature zone and the deposition temperature zone according to t...

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Abstract

The invention discloses a preparation method of a two-dimensional rhenium sulfide-molybdenum sulfide vertical heterostructure, which comprises the following steps: by adopting a chemical vapor deposition method, taking Si / SiO2 as a substrate, taking a metal rhenium foil (Re) as a rhenium source, taking a metal molybdenum foil (Mo) as a molybdenum source, flatly laying the metal rhenium foil on the surface of one end of the metal molybdenum foil, inversely buckling the substrate on the metal molybdenum foil, and reacting with sulfur vapor to obtain the two-dimensional rhenium sulfide-molybdenum sulfide vertical heterostructure. A two-dimensional ReS2 / MoS2 vertical heterostructure with multiple layers of ReS2 as a bottom layer and double layers of MoS2 as a top layer is prepared on a substrate. The obtained two-dimensional ReS2 / MoS2 vertical heterojunction material is a crystal formed by stacking two crystals with different sizes, shows a remarkable luminescent property, can be used as a channel material of a transistor to be applied to the field of ultrathin electronic devices, and has potential application in the field of efficient light detectors.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and in particular relates to a method for preparing a two-dimensional rhenium sulfide-molybdenum sulfide vertical heterostructure. Background technique [0002] Ultrathin two-dimensional semiconductor materials, such as transition metal dichalcogenides (TMDs), black phosphorus, boron nitride (BN), etc., have excellent optical and electrical properties, making them ideal for field-effect transistors, photodetectors, light-emitting diodes, Energy and other fields have considerable application prospects. Compared with bulk materials, molybdenum disulfide (MoS 2 ) represented by thin-layer two-dimensional transition metal dichalcogenides (TMDs) have excellent optical and electrical properties, such as layer-dependent indirect-direct bandgap transition, tunable bandwidth, high light emission efficiency, rich excitation Sub, good flexibility. However, it is difficult to control interlay...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/365H01L21/34H01L29/267H01L33/26
CPCH01L21/34H01L21/02568H01L21/0262H01L29/267H01L33/26
Inventor 陈飞吕秋燃夏媛苏伟涛
Owner HANGZHOU DIANZI UNIV
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