Semiconductor device forming method and semiconductor device

Abstract

The invention discloses a forming method of a semiconductor device and the semiconductor device. The forming method comprises the following steps: manufacturing a gate structure on a semiconductor substrate; forming a side wall on the surface of the side wall of the gate structure, wherein the thickness of the side wall is equal to the sum of a design target value and a preset thickening value; and performing ion implantation in the semiconductor substrate at two sides of the gate structure by taking the gate structure and the side walls as masks to form a source region and a drain region. By thickening the side wall of the gate structure, the distance between the source and the drain of the semiconductor device is increased, so that the electric field peak value in a channel can be reduced, the HCI effect is improved, the method is simple to operate, and the cost is basically not increased.

Description

technical field [0001] The present application relates to the technical field of semiconductor devices, in particular to a method for forming a semiconductor device and the semiconductor device. Background technique [0002] As the size of semiconductor devices (such as MOSFETs) continues to shrink, the channel length, polysilicon gate thickness, and junction depth of semiconductor devices are also reduced proportionally, but the power supply voltage is not reduced proportionally, which makes the electric field in the channel region The intensity increases obviously, and the hot carrier injection (Hot Carrier Injection, HCI) effect reduces the lifetime of semiconductor devices. [0003] In related technologies, HCI can be improved by adding lightly doped source and drain (Lightly Doped Drain, LDD) regions, but this method needs to add a new mask; or do not add a new mask but share the mask of other steps, The LDD region is manufactured by controlling the ion implantation co...

AI Technical Summary

Problems solved by technology

[0002] As the size of semiconductor devices (such as MOSFETs) continues to shrink, the channel length, polysilicon gate thickness, and junction depth of semiconductor devices are also reduced proportionally, but the power supply voltage is not reduced proportionally, which makes the electric field in the channel region The intensity increases significantly, and the hot carrier injection (Hot Carrier Injection, HCI) effect reduces the lifetime of semiconductor devices

[0003] In related technologies, HCI can be improved by adding lightly doped source and drain (Lightly Doped Drain, LDD) regions, but this method needs to add a new mask; or do not add a new mask but share the mask of other steps, And the LDD area is made by controlling the concentration, angle, and area of ​​the implanted area in the LDD area, but the control is difficult and the yield rate is reduced.

[0004] The increase of photomask or the decrease of yield rate will increase the production cost of semiconductor devices

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