Low-junction-temperature and high-voltage-resistance GaN heterojunction field effect transistor

Abstract

The invention relates to a power semiconductor technology, in particular to a low-junction-temperature and high-voltage-resistance GaN heterojunction field effect transistor. According to the low-junction-temperature and high-voltage-resistance GaN heterojunction field effect transistor provided by the invention, an AlN region is mainly inserted into a barrier layer to reduce a channel peak valveelectric field, so that the aims of increasing the voltage resistance and reducing the heat dissipation are realized. Furthermore, AlN with a good heat-conducting property is used as a passivation layer of a device, so that the current collapse is favorably inhibited and the effect of accelerating heat dissipation is also realized. The low-junction-temperature and high-voltage-resistance GaN heterojunction field effect transistor has the excellent effects that reverse voltage resistance of the device is improved, output properties of the device are improved and the channel temperature of the device is reduced, so that dangers caused by the current collapse and a self-heating effect are inhibited. The invention is especially applicable to the GaN heterojunction field effect transistor witha high-voltage-resistance capability and low channel temperature.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and relates to a GaN heterojunction field effect transistor with low junction temperature and high withstand voltage. Background technique [0002] With the advancement of science and technology, the demand for electric energy in human society is increasing day by day. How to efficiently use electric energy has become a problem that has to be considered at present. At present, almost all electrical energy must be converted by power semiconductor devices before it can be used by electronic equipment. As one of the foundation and core technologies of new energy and energy conservation and emission reduction, power semiconductor technology has effectively promoted the application of electric energy in a more efficient, energy-saving and environmentally friendly manner. In recent years, with the rise of new energy vehicles and other fields, power semiconductor technology has a broader a...

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Problems solved by technology

Self-heating effects can accelerate electromigration, degrade the gate, and can damage the wires connecting the die to the package case, causing a series of reliability problems

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