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Light emitting diode

A technology of light-emitting diodes and electrodes, applied in electrical components, electric solid-state devices, circuits, etc., can solve the problems of ineffective ultraviolet light emission and affect the light-emitting efficiency of light-emitting diodes, so as to improve light-emitting efficiency, reduce absorption, and shorten propagation paths. Effect

Pending Publication Date: 2022-03-18
QUANZHOU SANAN SEMICON TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the material in the epitaxial layer will absorb ultraviolet light, resulting in the ineffective emission of ultraviolet light in the epitaxial layer, which affects the light extraction efficiency of light-emitting diodes

Method used

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  • Light emitting diode
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Embodiment Construction

[0062] The implementation of the present invention will be illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the application. It should be noted that, in the case of no conflict, the following embodiments and features in the embodiments can be combined with each other.

[0063]It should be noted that the diagrams provided in the embodiments of the present invention are only schematically illustrating the basic idea of ​​the present invention, although only the components related to the present invention are shown in the diagrams rather than drawn ac...

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Abstract

The invention discloses a light emitting diode, which comprises a substrate, a first semiconductor layer arranged on the surface of the substrate, a protruding part arranged on the surface of the first semiconductor layer and a first reflection structure, and is characterized in that the surface of the first semiconductor layer comprises a first conductive region and a second conductive region; the protruding part is arranged in the first conductive region of the first semiconductor layer, and the protruding part sequentially comprises an active layer and a second semiconductor layer on the surface of the first semiconductor layer; the first reflection structures are arranged in the protruding parts and penetrate through the second semiconductor layer, the active layer and at least part of the first semiconductor layer, the material of the first semiconductor layer comprises Al < x > Ga < 1-x > N, X ranges from 0 to 1, and the wavelength of radiation light of the light-emitting diode ranges from 200 nm to 320 nm. According to the invention, the propagation path of light in the epitaxial layer can be effectively shortened, the light absorbed by the epitaxial layer, especially the first semiconductor layer, is reduced, and the light emitting efficiency of the light is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a light emitting diode. Background technique [0002] Ultraviolet light-emitting diodes refer to light-emitting diodes with a wavelength between 100nm and 365nm, which have great application value in the fields of fixation, sterilization, medical treatment, biochemical detection, and secure communication. Compared with mercury and other ultraviolet light sources, deep ultraviolet light-emitting diodes based on aluminum gallium nitride (AlGaN) materials have the advantages of robustness, energy saving, long life, mercury-free environmental protection, etc., and are gradually penetrating into traditional applications such as mercury lamps. [0003] At present, deep ultraviolet light emitting diodes mainly use AlInGaN (aluminum gallium indium oxide) as the main growth material of the epitaxial layer. Due to the high Al composition of AlInGaN in the epitaxial layer of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/15H01L33/46H01L33/62
CPCH01L33/46H01L27/15H01L33/62H01L33/382H01L33/387H01L33/10H01L33/32
Inventor 江宾臧雅姝张中英彭康伟陈思河龙思怡曾明俊陈功曾炜竣
Owner QUANZHOU SANAN SEMICON TECH CO LTD
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