Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Copper etching solution for Array process thick film technology in FP industry

A thick film process and copper etching technology, which is applied in the field of metal etching, can solve problems such as unstable chemical solution, safety accidents, and increased metal film thickness, and achieve the effects of controllable etching efficiency, long service life, and high safety

Pending Publication Date: 2022-02-01
SUZHOU BOYANG CHEM
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the thickness of the metal film layer in the thick film process is greatly increased, the amount of etching required is also greatly increased
The copper etching solution that can be used in the thick film process often has insufficient etching life, resulting in instability of the solution and easy to cause safety accidents

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Copper etching solution for Array process thick film technology in FP industry
  • Copper etching solution for Array process thick film technology in FP industry
  • Copper etching solution for Array process thick film technology in FP industry

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-5

[0016] According to the formula of Table 1, the copper etching solution for the Array process thick film process of FP industry prepared by mixing and preparing the embodiment 1-5:

[0017] Table 1: Unit: wt%

[0018]

[0019]

[0020] Note: The part less than 100wt% in the content is supplemented by deionized water.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of metal etching, and particularly relates to a copper etching solution for an Array process thick film process in the FP industry, which comprises the following components in percentage by mass: 5-10 percent of phosphoric acid, 1-5 percent of strong oxidizing acid, 0.1-1 percent of methylbenzotriazole, 1-5 percent of a chelating agent and the balance of deionized water. According to the invention, hydrogen peroxide is not contained in the formula, the stability is good, the safety is high, the etching efficiency is controllable, the service life is long, and the requirement of thick film process copper process etching can be met.

Description

technical field [0001] The invention relates to the technical field of metal etching, in particular to a copper etching solution used in the thick film process of the Array process in the FP industry. Background technique [0002] Thick film circuit refers to an integrated circuit composed of a passive network fabricated on the same substrate using array film technology (screen printing, sintering and electroplating, etc.) and assembled with discrete semiconductor devices, monolithic integrated circuits or micro components. A thick film is generally considered a film with a thickness of several micrometers to tens of micrometers. Thick-film hybrid integrated circuits are characterized by more flexible design, simple process, and low cost, and are especially suitable for multi-variety and small-batch production. In terms of electrical performance, it can withstand higher voltage, greater power and greater current. Thick film technology is widely used in automotive, consumer...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18
CPCC23F1/18
Inventor 陈浩李华平王润杰
Owner SUZHOU BOYANG CHEM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com