Method for multi-arc ion plating of titanium film on surface of AlN ceramic matrix
A multi-arc ion plating and ceramic substrate technology, applied in the field of surface coating, can solve the problems of uneven adhesion and low nickel plating layer, and achieve the effects of good protection, enhanced bonding effect, and good electrical properties
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Embodiment 1
[0022] A method for multi-arc ion plating titanium film on the surface of an AlN ceramic substrate, comprising the following steps:
[0023] (1) Sample treatment: ultrasonically clean the AlN ceramic substrate in acetone for 10 minutes, then ultrasonically clean it twice with ethanol, take it out and dry it;
[0024] (2) Equipment preparation: a multi-arc ion coating machine is used, two Al and Ti simple substance targets with a purity of 99.99% are selected, and the working gas is Ar gas with a purity of 99.99%.
[0025] (3) Put the sample processed in step (1) into the furnace, and pump the air pressure in the vacuum chamber to 1.6×10 -4 Pa, filled with argon sputtering gas, ion bombardment for 10min, argon gas flow rate 25ccm, sputtering pressure 2.0Pa, anode filament input power 1000W, turn on auxiliary heating, and raise the temperature to 400°C.
[0026] (4) Deposition of Al transition layer: Turn on the power supply of the multi-arc ion plating Al target, adjust the sp...
Embodiment 2
[0034] A method for multi-arc ion plating titanium film on the surface of an AlN ceramic substrate, comprising the following steps:
[0035] (1) Sample treatment: ultrasonically clean the AlN ceramic substrate in acetone for 10 minutes, then ultrasonically clean it twice with ethanol, take it out and dry it;
[0036] (2) Equipment preparation: a multi-arc ion coating machine is used, two Al and Ti simple substance targets with a purity of 99.99% are selected, and the working gas is Ar gas with a purity of 99.99%.
[0037] (3) Put the sample processed in step (1) into the furnace, and pump the air pressure in the vacuum chamber to 1.6×10 -4 Pa, filled with argon sputtering gas, ion bombardment for 10min, argon gas flow rate 10sccm, sputtering pressure 1.0Pa, anode filament input power 200W, turn on auxiliary heating, and raise the temperature to 400°C.
[0038] (4) Deposition of Al transition layer: Turn on the power supply of the multi-arc ion plating Al target, adjust the sput...
Embodiment 3
[0046] A method for multi-arc ion plating titanium film on the surface of an AlN ceramic substrate, comprising the following steps:
[0047] (1) Sample treatment: ultrasonically clean the AlN ceramic substrate in acetone for 10 minutes, then ultrasonically clean it twice with ethanol, take it out and dry it;
[0048] (2) Equipment preparation: use a multi-arc ion coating machine, select three Al and Ti simple substance targets with a purity of 99.99%, and use Ar gas with a purity of 99.99% as the working gas.
[0049] (3) The sample treated in step (1) is put into the furnace, and the air pressure in the vacuum chamber is pumped to 1.5×10 -3 Pa, filled with argon sputtering gas, ion bombardment for 10min, argon gas flow rate 15sccm, sputtering pressure 1.7Pa, anode input filament power 700W, turn on auxiliary heating, and raise the temperature to 400°C.
[0050] (4) Deposit the Al transition layer: turn on the power supply of the multi-arc ion plating Al target, adjust the sp...
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