Resonant gate driving circuit with crosstalk suppression and driving method thereof

Abstract

The invention discloses a resonance gate driving circuit with crosstalk suppression and a driving method thereof. The driving circuit comprises a digital controller circuit, a power supply circuit for supplying power to each electric circuit in the driving circuit, a crosstalk suppression circuit for suppressing bridge arm crosstalk of a SiC device, and a negative voltage generation circuit for providing negative voltage required when the SiC device is turned off, wherein the digital controller circuit generates pulse width modulation waves meeting the time sequence of the driving circuit, the signal output end of the digital controller circuit is connected with a digital isolation circuit, the signal output end of the digital isolation circuit is connected with an amplification circuit, and a resonance circuit used for charging and discharging the gate capacitor of the SiC device is connected between the amplification circuit and the SiC device. According to the invention, the resonance gate driving circuitis reasonable in design, convenient to implement, capable of being effectively applied to high-frequency driving of the SiC device, capable of effectively reducing power loss and effectively inhibiting bridge arm crosstalk by combining the driving method of resonance driving and crosstalk inhibition, high in driving reliability, remarkable in effect and convenient to popularize.

Description

technical field [0001] The invention belongs to the technical field of drive circuits, and in particular relates to a resonant gate drive circuit with crosstalk suppression and a drive method thereof. Background technique [0002] The gate of silicon-based power semiconductor devices uses series resistance to limit the current in the charging and discharging circuit. The circuit impedance is large, and the higher the operating frequency, the greater the loss; the parasitic inductance and capacitance in the circuit are prone to oscillation. Suppresses oscillations but reduces switching speed. The operating frequency of SiC MOSFET is much higher than that of Si devices, and it has the characteristics of small on-resistance, small parasitic parameters, high temperature resistance and high voltage resistance. The traditional gate drive (Conventional Gate Drive, CGD) circuit is no longer suitable for SiC MOSFET high frequency drive circuit. Therefore, a resonant gate drive (Res...

AI Technical Summary

Problems solved by technology

However, in high-frequency applications, SiC MOSFET devices have large driving losses during high-frequency operation, are susceptible to parasitic parameter interference, and bridge arm crosstalk leads to false conduction of the device. The circuits in the prior art cannot fully meet the driving requirements.

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