Light-emitting device

Abstract

A light-emitting device according to the invention comprises: a substrate; a first conductive type semiconductor layer disposed on the substrate; a mesa disposed on the first conductive type semiconductor layer and including a second conductive type semiconductor layer and an active layer; a first contact electrode contacting the exposed first conductive type semiconductor layer around the mesa; a second contact electrode contacting the second conductive type semiconductor layer on the mesa; a passivation layer covering the first contact electrode, the mesa, and the second contact electrode and having openings; and first and second bump electrodes electrically connected to the first and second contact electrodes through the openings of the passivation layer, wherein the mesa has a plurality of depressions when viewed from above, the first contact electrode is separated from the mesa at a predetermined distance and formed to surround the mesa and contacts the first conductive type semiconductor layer in the pluraity of depressions, and the first and second bump electrodes cover the openings of the passivation layer and a part of the passivation layer.

Description

[0001] This application is a divisional application of the patent application with the filing date of January 11, 2017, the application number of 201780006654.7, and the title of "ultraviolet light-emitting element". technical field [0002] The invention relates to a light-emitting element, in particular to a light-emitting element capable of improving light extraction efficiency. Background technique [0003] Recently, in order to improve luminous efficiency and solve heat dissipation problems, attention is increasing on light-emitting elements in the form of flip chips. [0004] Compared with the conventional light-emitting elements, the light-emitting element of the flip-chip structure has higher heat dissipation efficiency and almost no light shielding, so it has the effect of improving the light efficiency by more than 50% compared with the existing light-emitting elements. However, even with such advantages, the flip-chip light-emitting element may have the following ...

AI Technical Summary

Problems solved by technology

[0006] If such a phenomenon occurs, no light will be emitted throughout the entire area of ​​the active layer, which may result in low luminous efficiency and low reliability

In order to overcome this problem, there may occur the problem of needing to increase the operating voltage and the problem of requiring additional technology in order to increase the amount of light

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