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Voltage difference value real-time detection and dynamic adjustment circuit

A real-time detection and dynamic adjustment technology, applied in the direction of only measuring voltage, measuring current/voltage, emergency protection circuit devices, etc., can solve the problems of increased leakage current, damaged load, large conduction loss, etc. Effects of improved stability, fast regulation of gate voltage path, excellent dynamic response

Active Publication Date: 2021-12-28
SUZHOU KAIWEITE SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] 1. The Schottky diode has a large forward conduction loss, and the greater the load current, the greater the conduction loss;
[0004] 2. The forward conduction loss of the Schottky diode causes heat generation. In order to prevent high temperature damage, a radiator needs to be added, resulting in increased cost and wasted area;
[0005] 3. Schottky diodes have a reverse leakage current, especially when the reverse bias voltage is high and the temperature is high, the leakage current will increase significantly, resulting in loss and damage to the load;

Method used

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Embodiment

[0023] Example: such as figure 2 As shown, the present invention provides a voltage difference real-time detection and dynamic adjustment circuit, the circuit includes an NMOS transistor Q1, a dynamic adjustment module, a real-time detection module, a power supply, a capacitor and a load, and the real-time detection module is connected to the NMOS transistor Q1 The cathode and anode of the dynamic adjustment module are connected to the gate of the NMOS transistor Q1. The real-time detection module includes a triode Q1, the emitter of the triode Q1 is connected to a resistor R1, the base of the triode Q1 is connected to the base of the triode Q2, the collector of the triode Q1 is connected to the MOS transistor N2, the emitter of the triode Q2 is connected to a resistor R2, and the triode Q1 is connected to the base of the triode Q2. The collector of Q2 is connected to the resistor R6, the base of the transistor Q2 is connected to the transistor Q3, the emitter of the transist...

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Abstract

The invention provides a voltage difference value real-time detection and dynamic regulation circuit, which comprises an NMOS tube Q1, a dynamic regulation module, a real-time detection module, a power supply, a capacitor and a load. The voltage difference value real-time detection module detects the voltage difference between an anode and a cathode of the Q1 and performs amplification processing and level shift on a voltage difference signal; and the processed signal is transmitted to the dynamic regulation module provided by the invention, and the processed signal is transmitted to the grid electrode of the Q1 tube after being processed by the dynamic regulation module so as to adjust the conduction degree of the Q1 tube. When the voltage difference between the anode and the cathode is greater than a target value, the grid voltage is increased, the on-resistance of Q1 is reduced, and therefore the voltage difference between the anode and the cathode is reduced. The voltage difference real-time detection and dynamic adjustment circuit provided by the invention can flexibly adjust a target voltage difference value, can better adapt to different external MOS tubes, has a rapid adjustment grid voltage path, and has excellent dynamic response.

Description

technical field [0001] The invention relates to the technical field of power supply circuits, in particular to a voltage difference real-time detection and dynamic adjustment circuit. Background technique [0002] In the field of integrated circuit design, the field of reverse battery protection and parallel application of redundant power supplies and other fields. In order to protect the load from being damaged by reverse-biased power supply breakdown, traditional technology needs to apply a Schottky diode between the power supply and the load for protection. In normal use, the Schottky diode is forward-conducting. When set, the Schottky diode is reverse-biased and there is no reverse-biased current path, thus protecting the load. Traditional techniques such as figure 1 As shown, but using Schottky diodes as reverse protection has many disadvantages: [0003] 1. The Schottky diode has a large forward conduction loss, and the greater the load current, the greater the cond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R19/00H02H11/00
CPCG01R19/0084H02H11/003
Inventor 罗寅张胜谭在超丁国华
Owner SUZHOU KAIWEITE SEMICON
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