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Perovskite solar cell device based on polyvinyl acetate passivation film surface/interface defects and preparation method thereof

A polyvinyl acetate, solar cell technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, electrical components, etc., can solve problems such as carrier non-radiative conformity loss, and achieve stability problems, preparation and passivation. The chemical method is simple and easy to implement, and the effect of excellent photoelectric conversion characteristics

Pending Publication Date: 2021-11-30
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to propose a method based on PVA passivation film surface / interface defect for the carrier non-radiative coincidence loss and interface ion migration problem caused by the defect on the surface / interface of organic-inorganic metal halide perovskite film at present. Perovskite solar cell devices with excellent efficiency and stability

Method used

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  • Perovskite solar cell device based on polyvinyl acetate passivation film surface/interface defects and preparation method thereof
  • Perovskite solar cell device based on polyvinyl acetate passivation film surface/interface defects and preparation method thereof
  • Perovskite solar cell device based on polyvinyl acetate passivation film surface/interface defects and preparation method thereof

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Embodiment 1

[0029] SnO 2 The preparation method of the electron transport layer: the SnO 2 Mix the nanoparticle solution with high-purity water at a volume ratio of 1:3, and stir for 10 minutes at room temperature to obtain transparent and uniform SnO 2 solution.

[0030] The preparation method of perovskite precursor liquid: step 1, at first the PbI that quality is 691.5mg 2 Add it to a mixed solvent of DMF and DMSO with a volume ratio of 900-940:60-100 μL to dissolve, and stir at 120-150° C. for 0.3-0.5 h to obtain a precursor solution 1; Step 2: Mix 271.5 mg HC (NH 2 ) 2 I(FAI), 19.5mg CH 3 NH 3 I(MAI) and 27.3mgCH 3 NH 3 Dissolve Cl(MACl) in 3mL of isopropanol to obtain a mixed organic salt solution, and stir at room temperature for 0.3-0.5h to obtain precursor solution 2.

[0031] The preparation method of the PVA passivation layer: Dissolve PVA in high-purity chlorobenzene to obtain a chlorobenzene solution with a PVA concentration of 5mg / 1mL, stir at 80°C for 24h, and stand...

Embodiment 2

[0035] This embodiment discloses a perovskite solar cell device based on PVA passivation film surface / interface defects, and its preparation steps are as follows:

[0036] The substrate is made of conductive ITO grown on glass. Adopt the SnO that embodiment 1 prepares 2 solution, perovskite precursor, PVA solution and Spiro-OMeTAD solution.

[0037] (1) Before preparing the electron transport layer, first clean the substrate, the substrate is 15×15mm 2 square glass, one side of the glass is coated with 7.5×15mm 2 The ITO. Ultrasonic cleaning was performed for 30 min with detergent, deionized water, ethanol, and isopropanol, respectively. Washed substrate with N 2 Dry it with an air gun and put it into a watch glass, treat it with UV-ozone cleaning equipment for 12 minutes, and store it in a dust-free environment for later use.

[0038] (2) Prepare SnO by single-step spin-coating process 2 electron transport layer. That is, turn on the spin coater, set it at 3000 rpm fo...

Embodiment 3

[0045] This embodiment discloses a perovskite solar cell device based on PVA passivation film surface / interface defects, and its preparation steps are as follows:

[0046] The substrate is made of conductive ITO grown on glass. Adopt the SnO that embodiment 1 prepares 2 solution, perovskite precursor, PVA solution and Spiro-OMeTAD solution.

[0047] (1) Before preparing the electron transport layer, first clean the substrate, the substrate is 15×15mm 2 square glass, one side of the glass is coated with 7.5×15mm 2 The ITO. Ultrasonic cleaning was performed for 30 min with detergent, deionized water, ethanol, and isopropanol, respectively. Washed substrate with N 2 Dry it with an air gun and put it into a watch glass, treat it with UV-ozone cleaning equipment for 12 minutes, and store it in a dust-free environment for later use.

[0048] (2) Prepare SnO by single-step spin-coating process 2 electron transport layer. That is, turn on the spin coater, set it at 3000 rpm fo...

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Abstract

The invention provides a perovskite solar cell device based on polyvinyl acetate passivation film surface / interface defects and a preparation method thereof. The basic structure of the perovskite solar cell photovoltaic device comprises a conductive substrate, an electron transport layer, an organic-inorganic hybrid metal halide perovskite light absorption layer, an interface defect passivation layer, a hole transport layer and a photo-anode. The perovskite thin film solar photovoltaic device is simple in preparation method and low in cost, the PVA interface defect passivation layer greatly reduces interface non-radiative recombination loss, ion migration and performance degradation of the interface of the light absorption layer and the hole transport layer are inhibited, the photoelectric conversion efficiency and long-term stability of the device are improved, and important theoretical basis and technical support are provided for practicability of the efficient and stable perovskite solar cell.

Description

technical field [0001] The invention relates to semiconductor material photovoltaic technology, in particular to a perovskite solar cell device based on polyvinyl acetate (PVA) passivation film surface / interface defects and a preparation method thereof. Background technique [0002] The development of advanced photovoltaic technology is a major requirement of the national energy strategy. The new perovskite solar cells (Perovskite Solar Cells, referred to as PSCs) have sprung up and developed rapidly in recent years. They are expected to break through the limitations of existing principles and technologies, and provide transformative technical support for the development and efficient utilization of clean solar energy. great attention from the industry. As a class of direct bandgap semiconductor materials, metal halide perovskite materials have the perovskite crystal form ABX 3 (A=MA + (CH 3 NH 3 + ), FA + (NH(CH 3 ) 2 + ), Cs + etc., B=Pb 2+ , Sn 2+ etc., X=I ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K71/12H10K30/15H10K30/88Y02E10/549
Inventor 王敏焕边继明
Owner DALIAN UNIV OF TECH
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