Method for regulating and controlling thickness of two-dimensional Bi2O2Se thin film

Abstract

The invention discloses a method for regulating and controlling the thickness of a two-dimensional Bi2O2Se thin film. The method comprises the following steps that the two-dimensional Bi2O2Se thin film with a first thickness is prepared on a first substrate through a chemical vapor deposition method; the thickness of the two-dimensional Bi2O2Se thin film is regulated and controlled to be a second thickness through a plasma etching process, the vacuum degree of etching equipment of the plasma etching process is 6.4*10<-4> Pa, the radio frequency power is 120 W, the current of a neutralizer is 500 mA, the current range of an ion beam is 80 mA to 100 mA, the voltage of the ion beam is 200 V to 280 V, the Ar flow is 10 sccm, the O2 flow is 6 sccm, and the etching time is 6-20 seconds. The method is simple to operate and good in repeatability, and realizes uniform thinning of the two-dimensional Bi2O2Se thin film material.

Description

technical field [0001] The invention relates to the field of preparation of inorganic materials, more specifically to a Bi 2 o 2 Control method of Se thin film thickness. Background technique [0002] Two-dimensional materials include graphene, hexagonal boron nitride (hBN) and transition metal chalcogenides (TMDCs), etc., which have excellent optical, electrical, magnetic and mechanical properties, and are used in biosensing, gas sensing, light Detection, photocatalysis, solar cell energy storage, and flexible wearable devices have been widely used. Due to the atomically thin structure and high surface-to-volume ratio of 2D materials, the surface state of the material plays a very important role in the device performance. It is well known that the electronic structure of 2D materials strongly depends on their thickness, such as MoS from multilayer to monolayer 2 A transition from an indirect bandgap to a direct bandgap occurs. [0003] Two-dimensional Bi synthesized by...

AI Technical Summary

Problems solved by technology

Currently, Bi 2 o 2 The application of Se materials is mainly concentrated in the field of photodetection, because the two-dimensional Bi 2 o 2 The synthesis of Se materials is limited to mica substrates, SiO 2 / Si substrate is difficult to synthesize, and the reported non-destructive transfer method is more difficult

Thanks Bi 2 o 2 The combination between Se material and mica is strong. Using the widely reported HF wet transfer method still faces many problems, such as HF will damage the sample surface, large-sized thin samples are easy to break, and thin samples with a thickness below 5nm are not easy to transfer and have a large size. Small

This results in Bi after HF transfer 2 o 2 Se has high dark current and very low gating capability, limiting the large-size Bi below 5nm 2 o 2 Applications of Se thin samples in the field of electrical and optoelectronic devices

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