Comprehensive energy utilization method for polycrystalline silicon tail gas

A technology of polysilicon and exhaust gas, applied in the direction of separation methods, silicon compounds, silicon halide compounds, etc., to achieve the effects of saving energy, increasing processing capacity, and controlling energy consumption of the system

Active Publication Date: 2021-11-19
SICHUAN YONGXIANG POLY SILICON
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006]The present invention aims to solve the problem of system energy consumption caused by the reduction and its supporting process capacity increase, and provides a method for comprehensive utilization of polysilicon tail gas energy. Adding a 7°C water-cooled heat exchanger to the existing recovery and / or cold hydrogenation system, through the efficient use of energy, not only realizes the load problem of system capacity increase, but also solves the bottleneck of reduction capacity increase

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  • Comprehensive energy utilization method for polycrystalline silicon tail gas
  • Comprehensive energy utilization method for polycrystalline silicon tail gas
  • Comprehensive energy utilization method for polycrystalline silicon tail gas

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Embodiment 1

[0031] This embodiment is a comprehensive energy utilization method for polysilicon tail gas. This method is mainly aimed at the increase in the amount of reduction tail gas after the existing reduction capacity is increased, and the recovery system and cold hydrogenation system for the reduction tail gas will be used in the future due to the increase in energy consumption. The problem that the processing capacity cannot be further improved. Solutions include: adding a 7°C water-cooled heat exchanger in the reduction tail gas recovery steel structure system, and adding a 7°C water-cooled heat exchanger in the cold hydrogenation tail gas condensation system.

[0032] First of all, the reduction tail gas recovery steel structure system is to reduce the chlorosilane (trichlorosilane, silicon tetrachloride, dichlorodihydrosilane), H 2 and HCl to separate the process system, the chlorosilane is sent to the recovery rectification unit, the H 2 After being sent to the adsorption uni...

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Abstract

The invention discloses a comprehensive energy utilization method for polycrystalline silicon tail gas. The method comprises at least one of the following modes: I, adding a 7-DEG C water-cooling heat exchanger in a reduction tail gas recovery steel structure system; and II, adding a 7-DEG C water-cooling heat exchanger in a cold hydrogenated tail gas condensation system. The invention aims to solve the problem of system energy consumption caused by capacity improvement of reduction and a matched process thereof, and by adding a 7-DEG C water-cooling heat exchanger in an existing recovery and / or cold hydrogenation system and efficiently utilizing energy, not only is the load problem of system capacity improvement realized, but also the bottleneck of reduction capacity improvement is solved.

Description

technical field [0001] The invention belongs to the technical field of polysilicon production, and specifically relates to an energy comprehensive utilization method of polysilicon tail gas. Background technique [0002] With the continuous improvement of the technical level of the photovoltaic industry, the scale of the polysilicon photovoltaic industry has gradually expanded, and the reduction capacity of polysilicon has been improved. Cold hydrogenation technology, as a recovery and reuse process of by-products in the polysilicon production process, can effectively reduce the production cost of polysilicon, and its production capacity needs to be increased accordingly. In production, the cold hydrogenation process needs to convert polysilicon production by-product silicon tetrachloride (STC) into trichlorosilane (TCS) under high pressure and low temperature, and then produce silane through disproportionation reaction of TCS. With the increase of cold hydrogenation produc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107C01B33/03C01B3/50F28D7/08F25B15/06B01D53/18B01D53/14
CPCC01B33/1071C01B3/50C01B33/03F28D7/08F25B15/06B01D53/18B01D53/1412B01D53/1425B01D53/1418B01D2257/204Y02P20/10Y02P20/50
Inventor 官健刘逸枫汪云清杨华
Owner SICHUAN YONGXIANG POLY SILICON
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