Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of photonic crystal based on 3D printing and photonic crystal

A technology of photonic crystal and 3D printing, which is applied in the direction of 3D object support structure, additive manufacturing, manufacturing tools, etc., can solve the problems of complex process, low precision of photonic crystal, and difficult to reach micron-level long cylinder width, so as to realize scattering, Achieve stealth and modulation, improve the effect of the application band range

Pending Publication Date: 2021-11-16
佛山(华南)新材料研究院
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this method, a long cylindrical shell with a wood pile structure is first formed, and then different dielectric materials are injected. The process is complex, and the precision of the produced photonic crystal is low; in addition, the width of the long cylindrical body formed by this method is difficult to reach the micron level. , the width of the dielectric rods formed by the injection of the dielectric material after molding is also difficult to reach the micron level, so the photonic crystals prepared by this method can only be used in the wavelength band below 1GHz

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of photonic crystal based on 3D printing and photonic crystal
  • Preparation method of photonic crystal based on 3D printing and photonic crystal
  • Preparation method of photonic crystal based on 3D printing and photonic crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings. It is only stated here that the words for directions such as up, down, left, right, front, back, inside, and outside that appear or will appear in the text of the present invention are only based on the accompanying drawings of the present invention, and are not specific to the present invention. limited.

[0032] see figure 1 , a kind of preparation method based on 3D printing photonic crystal provided by the present invention, comprises the following steps:

[0033] S1. Prepare a slurry, the elastic modulus of the slurry is greater than the viscous modulus, and has viscoelastic inversion, and the slurry is made of polydimethylsiloxane and ceramic materials, wherein the slurry The material is divided into slurry A and slurry B, and the dielectric constant of slur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
frequencyaaaaaaaaaa
quality scoreaaaaaaaaaa
Login to View More

Abstract

The invention discloses a photonic crystal based on 3D printing and a preparation method thereof. The preparation method comprises the following steps that S1, slurry is prepared, the elasticity modulus of the slurry is larger than the viscous modulus, the slurry has viscoelastic inversion performance, the slurry is prepared from polydimethylsiloxane and a ceramic material, the slurry is divided into slurry A and slurry B; the dielectric constant of the slurry A is not equal to that of the slurry B; S2, a first crystal layer is formed from the slurry A and forming a second crystal layer from the slurry B by film-free direct-writing 3D printing equipment, and the first crystal layer and the second crystal layer are stacked to form a wood pile structure to obtain a photonic crystal semi-finished product; and S3, the photonic crystal semi-finished product is cured to obtain the photonic crystal. According to the preparation method, the process is simple, the prepared photonic crystal is high in precision, the stealth of terahertz waves with different frequency bands can be realized, and the applied wave band can be in a range of 10 GHz-10 THz.

Description

technical field [0001] The invention relates to the technical field of photonic crystals, in particular to a preparation method based on 3D printing photonic crystals and photonic crystals. Background technique [0002] Terahertz (THz) waves refer to electromagnetic waves with a frequency of 0.1THz to 10THz and a wavelength range of 30μm to 3mm. Terahertz waves have "dual characteristics" of both microwaves and light waves, that is, similar to microwave penetration and similar The directionality of light waves has very strong complementary characteristics compared to electromagnetic waves in other wave bands. Compared with microwave and millimeter wave, THz detection technology can obtain higher resolution, has outstanding anti-interference ability and unique anti-stealth ability; compared with laser, THz technology has wide field of view, good search ability, and is applicable In bad weather conditions and other advantages. [0003] Photonic crystal is a periodic dielectr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B29C64/124B29C64/393B33Y10/00B33Y70/10C04B26/32C08L83/04C08K3/24C08K3/22
CPCB29C64/124B29C64/393B33Y10/00B33Y70/10C04B26/32C08K3/24C08K3/22C08K2003/2244C04B14/305C04B14/306C08L83/04
Inventor 朱朋飞李勃张伟喆秦政陈劲
Owner 佛山(华南)新材料研究院
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products