Strong oxidant cleaning solution for wafer boat for semiconductor production and cleaning method thereof

A strong oxidizing agent and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, inorganic non-surface-active cleaning compositions, electrical components, etc., can solve the problem of incomplete removal of pollutants, and achieve clean surfaces, low cost, and no corrosion marks Effect

Pending Publication Date: 2021-11-12
江苏凯威特斯半导体科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to overcome the defect that hydrofluoric acid and hydrochloric acid are usually used as the main cleaning liquid for crystal boats in the prior art, and the defects of incomplete removal of pollutants exist, and provide a crystal boat cleaning method for semiconductor production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Strong oxidant cleaning solution for wafer boat for semiconductor production and cleaning method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A method for cleaning a crystal boat used in semiconductor production, comprising the steps of:

[0022] The first step is to soak the crystal boat to be cleaned in a hydrofluoric acid solution with a concentration of 2% for 10 minutes;

[0023] The second step is to soak the crystal boat in a mixed solution of 5% hydrofluoric acid and 3% potassium permanganate for 30 minutes;

[0024] There is a nitrogen bubbling device at the bottom of the immersion tank used, and the nitrogen flow rate is 50L / H;

[0025] The third step is to use ultrapure water to overflow the crystal boat for 5H;

[0026] The fourth step is to soak the crystal boat in 5% hydrogen peroxide for 1H, and the temperature of the hydrogen peroxide is 50°C;

[0027] There is a nitrogen bubbling device at the bottom of the soaking tank used, and the nitrogen flow rate is 30L / H;

[0028] The fifth step is to use ultrapure water to overflow the crystal boat for 5 hours;

[0029] The sixth step is to take o...

Embodiment 2

[0032] A method for cleaning a crystal boat used in semiconductor production, comprising the steps of:

[0033] The first step is to soak the crystal boat to be cleaned in a hydrofluoric acid solution with a concentration of 2% for 20 minutes;

[0034] The second step is to soak the crystal boat in a mixed solution of 5% hydrofluoric acid and 1% potassium dichromate for 30 minutes;

[0035] There is a nitrogen bubbling device at the bottom of the immersion tank used, and the nitrogen flow rate is 40L / H;

[0036] The third step uses ultrapure water to overflow the crystal boat for 3H;

[0037] The fourth step is to soak the crystal boat in 5% hydrogen peroxide for 1H, and the temperature of the hydrogen peroxide is 40°C;

[0038] There is a nitrogen bubbling device at the bottom of the immersion tank used, and the nitrogen flow rate is 40L / H;

[0039] The fifth step is to use ultrapure water to overflow the crystal boat for 5 hours;

[0040] The sixth step is to take out th...

Embodiment 3

[0043] A method for cleaning a crystal boat used in semiconductor production, comprising the steps of:

[0044] The first step is to soak the crystal boat to be cleaned in a hydrofluoric acid solution with a concentration of 2% for 16 minutes;

[0045] The second step is to soak the crystal boat in a mixed solution of 10% hydrofluoric acid and 5% potassium permanganate for 8 minutes;

[0046] There is a nitrogen bubbling device at the bottom of the soaking tank used, and the nitrogen flow rate is 45L / H;

[0047] The third step is to use ultrapure water to overflow the crystal boat for 8 hours;

[0048] The fourth step is to soak the crystal boat in 6% hydrogen peroxide for 1H, and the temperature of the hydrogen peroxide is 60°C;

[0049] There is a nitrogen bubbling device at the bottom of the immersion tank used, and the nitrogen flow rate is 25L / H;

[0050] The fifth step is to use ultrapure water to overflow the crystal boat for 6 hours;

[0051] The sixth step is to t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a strong oxidant cleaning solution for a wafer boat for semiconductor production, the strong oxidant cleaning solution is a mixed solution of hydrofluoric acid and a strong oxidant, and the strong oxidant is at least one of potassium dichromate, potassium permanganate, potassium perchlorate and sodium ferrate; the concentration of hydrofluoric acid is 2-20wt%, and the concentration of the strong oxidant is 1-10wt%. The mixed solution of hydrofluoric acid and the strong oxidant is used for cleaning the semiconductor wafer boat, and nitrogen is used for bubbling, so that pollution can be completely removed, and the cleanliness of the product is ensured. The wafer boat cleaned by the method is low in cost and high in cleaning efficiency; rainbow prints on the surface of the wafer boat and organic pollutants and inorganic particulate matters such as stubborn photoresist can be effectively removed. Meanwhile, the surface of the wafer boat can be ensured to be clean and free of corrosion marks to the greatest extent, and the product is ensured to meet the use standard.

Description

technical field [0001] The invention relates to a strong oxidant cleaning solution and a cleaning method for crystal boats used in semiconductor production. Background technique [0002] During the production process, the crystal boat will be contaminated with photoresist and plasma by-product impurities. Low-concentration hydrofluoric acid removes these substances slowly and incompletely, while high-concentration hydrofluoric acid will corrode the crystal boat and affect production. When there is incomplete removal of pollutants in the wafer boat, the cleanliness of the wafer boat surface will directly affect the production quality of semiconductors. Contents of the invention [0003] The technical problem to be solved by the present invention is to overcome the defect that hydrofluoric acid and hydrochloric acid are usually used as the main cleaning liquid for crystal boats in the prior art, and the defects of incomplete removal of pollutants exist, and provide a crysta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C11D7/08C11D7/10H01L21/02
CPCC11D7/08C11D7/10H01L21/02041
Inventor 薛弘宇顾仁宝朱文键李伟东余箫伟
Owner 江苏凯威特斯半导体科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap