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A Microbridge Structure Infrared Detector

An infrared detector and micro-bridge structure technology, applied in the field of infrared detection, can solve the problems of low performance of infrared detectors, low pixel scale, poor consistency, etc., and achieve the effects of reducing process difficulty, small chip area, and low cost

Active Publication Date: 2022-05-24
BEIJING NORTH GAOYE TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] In order to solve the above-mentioned technical problems or at least partially solve the above-mentioned technical problems, the present disclosure provides a micro-bridge structure infrared detector, which solves the problems of low performance, low pixel scale, low yield and poor consistency of traditional MEMS process infrared detectors. question

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  • A Microbridge Structure Infrared Detector
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  • A Microbridge Structure Infrared Detector

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Embodiment Construction

[0086] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that the embodiments of the present disclosure and the features in the embodiments may be combined with each other under the condition of no conflict.

[0087] Many specific details are set forth in the following description to facilitate a full understanding of the present disclosure, but the present disclosure can also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only a part of the embodiments of the present disclosure, and Not all examples.

[0088] figure 1 A schematic diagram of a three-dimensional structure of a pixel of an infrared detector provided in an embodiment of the present disclosure, figure 2 This is a schematic cross-sectional structure diagram of a pixel of an infrared detector pro...

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Abstract

The disclosure relates to an infrared detector with a microbridge structure. The CMOS measurement circuit system and the CMOS infrared sensing structure in the infrared detector are both prepared by CMOS technology, and the CMOS manufacturing technology includes metal interconnection technology, through-hole technology, IMD technology and RDL process, in the infrared detector with multi-layer structure, the first columnar structure includes at least one layer of solid columnar structure and / or at least one layer of hollow columnar structure, and the second columnar structure includes at least one layer of solid columnar structure and / or at least one layer of hollow columnar structure A columnar structure, the sacrificial layer is used to form a hollow structure for the CMOS infrared sensing structure, the material constituting the sacrificial layer includes at least one of silicon, germanium or silicon germanium, the sacrificial layer is etched by using an etching gas and a post-CMOS process, and the The etching gas includes at least one of xenon fluoride, chlorine gas, bromine gas, carbon tetrachloride and chlorofluorocarbons. Through the technical solution disclosed in the present disclosure, the problems of low performance, low pixel scale, low yield and poor consistency of traditional MEMS process infrared detectors are solved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, and in particular, to an infrared detector with a micro-bridge structure. Background technique [0002] Surveillance market, vehicle auxiliary market, home market, smart manufacturing market, and mobile phone applications all have strong demands for uncooled high-performance chips, and the quality of chip performance, the consistency of performance, and the price of products have certain requirements. It is expected that there will be a potential demand of more than 100 million chips every year, and the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts a combination of measurement circuit and infrared sensing structure. The measuring circuit is fabricated by CMOS (Complementary Metal-Oxide-Semiconductor, complementary metal oxide semiconductor) process, and the infrared sensing structure is MEMS (Micro-Elec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/24
CPCG01J5/24
Inventor 翟光杰武佩潘辉翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD
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