Chemical vapor deposition furnace

Abstract

The invention discloses a chemical vapor deposition furnace. The chemical vapor deposition furnace comprises a furnace body, a deposition chamber is arranged in the furnace body, the top of the deposition chamber is connected with a vacuum pipeline, the bottom of the deposition chamber is arranged on a crucible cover, a raw material crucible is arranged at the bottom of the crucible cover, and a gas introduction device is further arranged on the surface, corresponding to the deposition chamber, of the crucible cover. The gas introduction device comprises multiple gas boxes which are arranged in parallel, multiple gas nozzles are arranged on the gas boxes, two adjacent gas boxes are respectively communicated and connected with the raw material crucible and a mixed raw material gas inlet channel, the raw material crucible is further communicated and connected with a carrier gas inlet channel, and gas distribution plates are arranged in the gas boxes. According to the chemical vapor deposition furnace, the uniformity of the raw material ratio in the deposition space can be remarkably improved, and a product with a larger area and uniform thickness can be obtained through deposition more easily.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, in particular to a chemical vapor deposition furnace. Background technique [0002] Chemical vapor deposition (CVD) has been widely used to prepare various inorganic materials: such as fibrous materials for composite materials (such as B, B 4 C), thin layer material for diffusion barrier (such as ZrO 2 ), powder materials for fine ceramics (such as Al 2 O 3 , SiC), polycrystalline bulk materials (eg ZnS, ZnSe) for infrared windows. Among them, the use of CVD technology to prepare ZnS and ZnSe crystals has the advantages of high purity, high density, low absorption, excellent optical properties, etc., and it is easy to realize the preparation of large-scale materials. It is currently the mainstream technology for producing ZnS and ZnSe materials. [0003] The technical scheme for preparing ZnS (ZnSe) by chemical vapor deposition (CVD) technology is as follows: the bottom of t...

AI Technical Summary

Problems solved by technology

[0005] Due to the large space in the deposition chamber, H 2 S(H 2 Se) and Zn vapor both enter the deposition chamber through multiple pores, and the H 2 S(H 2 Se) gas is controlled by a multi-channel gas mass flowmeter, which can keep the gas flow of each pore consistent, but Zn vapor is carried into the deposition chamber by Ar gas passing over the molten Zn liquid surface in the crucible, so it is difficult to ensure that each The gas flow of each Zn outlet hole is kept consistent, which will cause the reactant Zn and H in the space 2 S(H 2 The difference in the ratio of Se) leads to certain differences in the structure and performance of materials deposited at different positions, and the uniformity becomes poor. This will seriously affect the quality of the product in actual production, especially in large-scale production.

Images