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Mn < 2 + >-doped cesium lead halogen group perovskite quantum dot film and preparation method thereof

A perovskite and quantum dot technology, applied in chemical instruments and methods, nanotechnology, coatings, etc., can solve the problems of poor product luminescence performance, material structure defects, strong annealing effect, etc., to increase the diffusion driving force, The effect of high crystal quality and high emission intensity

Active Publication Date: 2021-10-15
SHANGHAI INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a kind of Mn 2+ Doped cesium lead halide perovskite quantum dot film and its preparation method, used to solve the problem of preparing Mn by existing high temperature thermal injection method 2+ Doped CsPbX 3 (X=Cl, Br) In the process of perovskite quantum dot film, the temperature is too high to cause Mn 2+ The self-annealing effect is too strong, and the temperature is too low to cause structural defects in the material, which leads to poor luminous performance of the product

Method used

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  • Mn &lt; 2 + &gt;-doped cesium lead halogen group perovskite quantum dot film and preparation method thereof
  • Mn &lt; 2 + &gt;-doped cesium lead halogen group perovskite quantum dot film and preparation method thereof
  • Mn &lt; 2 + &gt;-doped cesium lead halogen group perovskite quantum dot film and preparation method thereof

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preparation example Construction

[0046] a kind of Mn 2+ Doped cesium lead halide perovskite quantum dot thin film, its preparation method comprises the following steps:

[0047] 1) Mix OA, OAm, and an organic solvent uniformly at a volume ratio of (0.5-1.5):(0.05-0.2):10; wherein, the organic solvent can be N,N-dimethylformamide (DMF);

[0048] 2) Add CsX and PbY according to the molar ratio 1:1:(1-9) 2 、MnZ 2 (wherein the concentration of Mn is 0.04-0.31mol / L), after being fully reacted by magnetic stirring, it is left to stand for 30-60min to obtain a precursor solution; wherein, X, Y, and Z are at least one of Cl or Br respectively;

[0049] 3) mixing the precursor solution and toluene with a volume ratio of 1:(20-80) to obtain a perovskite quantum dot solution;

[0050] 4) Place the cleaned and dried flexible film substrate in the precursor solution, centrifuge at 2000-4000rpm for 5-10min, remove the supernatant and dry to obtain Mn 2+ Doped cesium lead halide perovskite quantum dot film; among them, ...

Embodiment 1

[0054] a kind of Mn 2+ Doped CsPbX 3 (X=Cl, Br) perovskite quantum dot film, its preparation method comprises the following steps:

[0055] 1) Pipette 10mL DMF, 1mL OA, 0.2mL OAm into the beaker in sequence, then add 0.4mmol CsBr, 0.4mmol PbBr 2 , 1.2mmol MnCl 2 After mixing, it was fully reacted by magnetic stirring, and a mixed solution was obtained after standing for 30 minutes;

[0056] 2) Mix 1mL of the mixed solution with 0.04mmol of the silane coupling agent APTES to obtain a precursor solution;

[0057] 3) Take 100 μL of the precursor solution and add it dropwise to 5 mL of toluene to obtain Mn 2+ Doped CsPbX 3 (X=Cl, Br) perovskite quantum dot solution;

[0058] 4) After cleaning and drying the flexible film substrate, add to Mn 2+ Doped CsPbX 3 (X=Cl, Br) in the quantum dot solution, and then perform centrifugal coating at a centrifugal speed of 3000rpm for 5min, remove the supernatant, take out the product, and obtain Mn after drying. 2+ Doped CsPbX 3 (X=C...

Embodiment 2

[0065] a kind of Mn 2+ Doped CsPbX 3 (X=Cl, Br) perovskite quantum dot film, its preparation method comprises the following steps:

[0066]1) Use a pipette gun to pipette 10mL DMF, 1mL OA, 0.1mL OAm, and add them to the beaker in sequence, then add 0.5mmol CsCl, 0.5mmol PbBr 2 , 3.5mmol MnCl 2 After mixing, it was fully reacted by magnetic stirring, and a mixed solution was obtained after standing for 30 minutes;

[0067] 2) Mix 1 mL of the mixed solution with 0.06 mmol of silane coupling agent APTMS to obtain a precursor solution;

[0068] 3) Take 150 μL of precursor solution and add it dropwise into 5 mL of toluene to obtain Mn 2+ Doped CsPbX 3 (X=Cl, Br) perovskite quantum dot solution;

[0069] 4) After washing and drying the PET film substrate, add to Mn 2+ Doped CsPbX 3 (X=Cl, Br) in the quantum dot solution, and then perform centrifugal coating at a centrifugal speed of 3000rpm for 8min, remove the supernatant, take out the product, and obtain Mn after drying. ...

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Abstract

The invention relates to a Mn < 2 + >-doped cesium lead halogen group perovskite quantum dot film and a preparation method thereof. The preparation method comprises the steps of firstly preparing a mixed solution of oleic acid, an amino / amino ligand, CsX, PbY2 and MnZ2, and obtaining a precursor solution; mixing the precursor solution with toluene to obtain a perovskite quantum dot solution; and finally, placing the film substrate in the perovskite quantum dot solution, carrying out centrifugal coating, and drying to obtain the perovskite quantum dot film. Compared with the prior art, the Mn < 2 + >-doped CsPbX3 (X = Cl, Br) perovskite quantum dot film material is successfully prepared by adopting a room-temperature one-step centrifugal coating film preparation technology. The method not only enables the film material to maintain the luminescent property of quantum dots to a great extent, but also has the characteristics of simple operation, low cost and the like, and the prepared perovskite quantum dot film material is high in crystallization quality and high in two-photon emission intensity, so that the material has great application potential in the fields of photoelectric devices such as illumination and display.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials, and relates to a perovskite quantum dot film material, in particular to a Mn 2+ Doped CsPbX 3 (X=Cl, Br) perovskite quantum dot thin film and preparation method thereof. Background technique [0002] Lead halide perovskite materials have attractive application potential in solar cells, lasers, light-emitting devices, biosensors, and memories. Especially in the field of photovoltaics, in just seven years, the photoelectric conversion efficiency of solar cells using lead halide perovskite as the light absorbing layer soared from 3.8% to 22.1%, showing a broad market application potential. wxya 3 (A=MA + ,FA + , X = Cl, Br, I) type organic-inorganic hybrid perovskite quantum dots (QDs) materials have a narrow half-width and tunable high-efficiency photoluminescence (PL) in the entire visible spectrum, but the The hygrothermal instability exhibited by the material restricts its ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J7/06C08L67/02C08L23/06C09D1/00C09D5/22C09K11/02C09K11/66B82Y40/00B82Y30/00B82Y20/00
CPCC08J7/06C09D1/00C09D5/22C09K11/02C09K11/665B82Y20/00B82Y30/00B82Y40/00C08J2367/02C08J2323/06
Inventor 王凤超董恒星王陈飞陈进张灿云孔晋芳李澜胡蓉蓉张彦
Owner SHANGHAI INST OF TECH
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