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Full adder function implementation method based on resistive device

A realization method and a technology of resistive variable devices, which are applied in the direction of single semiconductor device testing, instrumentation, and measurement of electrical variables, can solve problems such as large area, large power consumption of CMOS adders, slow down in size reduction, etc., and achieve simplified operation methods, The effect of reducing the number of components and optimizing the circuit structure

Pending Publication Date: 2021-10-08
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the implementation of the full adder function is mainly based on CMOS devices. As the value of the two addition numbers increases, the number of adders increases, and the defects of the adder itself such as large delay and high power consumption become increasingly prominent, and the improvement of CMOS transistor devices is slow. Shrinkage slows down, manufacturing processes are facing physical limits
Therefore, the CMOS adder has problems such as large power consumption, large delay, and large area in the process of processing data.

Method used

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  • Full adder function implementation method based on resistive device
  • Full adder function implementation method based on resistive device
  • Full adder function implementation method based on resistive device

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Embodiment

[0039] Embodiment: a kind of full adder function realization method based on resistive switch device, comprises the following steps:

[0040] (1) Select a memristor with electroresistance transition and non-volatile and multi-resistance characteristics, such as figure 1 As shown, the memristor has a bottom electrode layer, a resistive layer, and a top electrode layer arranged sequentially from bottom to top. The top electrode layer of the memristor is defined as the T1 terminal, and the bottom electrode layer is the T2 terminal. According to the memristor The resistance value sets the two resistance states of the memristor, and the two resistance states are respectively recorded as the high-resistance state HRS, referred to as H and the low-resistance state LRS, referred to as L, and the resistance value range of the high-resistance state is 2000Ω~4000Ω , the resistance value range of the low resistance state is 50Ω~200Ω; the memristor of the present invention based on the ful...

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Abstract

The invention discloses a full adder function implementation method based on a resistive device. The method comprises the steps: adopting five memristors, setting two resistance states of the memristors according to resistance values of the memristors, and defining the initialized logic parameters of the memristors, input and output of the memristors and output of the memristors after read-write operation; adopting a semiconductor parameter analysis tester to apply positive scanning voltage and negative scanning voltage to the memristor to obtain threshold voltage of resistance state conversion of the memristor, and determining the amplitude of pulse voltage with the pulse width of 50 microseconds input by the memristor based on the threshold voltage; then initializing each memristor to a corresponding resistance state according to a full adder function to be realized, and then performing corresponding write operation on the memristors, so the binary one-bit full adder function can be realized. The method has the advantages of simplifying the operation method, greatly reducing the number of devices, reducing the circuit area and reducing the circuit power consumption.

Description

technical field [0001] The invention relates to a method for realizing a full adder function, in particular to a method for realizing a full adder function based on a resistive variable device. Background technique [0002] Traditional CMOS full adders mainly include modules such as AND gates, OR gates, and XOR gates. The traditional CMOS full adder implements addition operations and is often used as a computer arithmetic logic unit to perform logic operations, shifts, and instruction calls. Memristors are characterized by their small size, multi-resistance, low power consumption, and non-volatility. At present, the implementation of the full adder function is mainly based on CMOS devices. As the value of the two addition numbers increases, the number of adders increases, and the defects of the adder itself such as large delay and high power consumption become increasingly prominent, and the improvement of CMOS transistor devices is slow. Shrinkage is slowing down, and man...

Claims

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Application Information

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IPC IPC(8): H03K19/20G01R31/26
CPCH03K19/20G01R31/2603G01R31/2637Y02D10/00
Inventor 刘钢陈鑫辉
Owner SHANGHAI JIAO TONG UNIV
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