Full adder function implementation method based on resistive device
A realization method and a technology of resistive variable devices, which are applied in the direction of single semiconductor device testing, instrumentation, and measurement of electrical variables, can solve problems such as large area, large power consumption of CMOS adders, slow down in size reduction, etc., and achieve simplified operation methods, The effect of reducing the number of components and optimizing the circuit structure
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[0039] Embodiment: a kind of full adder function realization method based on resistive switch device, comprises the following steps:
[0040] (1) Select a memristor with electroresistance transition and non-volatile and multi-resistance characteristics, such as figure 1 As shown, the memristor has a bottom electrode layer, a resistive layer, and a top electrode layer arranged sequentially from bottom to top. The top electrode layer of the memristor is defined as the T1 terminal, and the bottom electrode layer is the T2 terminal. According to the memristor The resistance value sets the two resistance states of the memristor, and the two resistance states are respectively recorded as the high-resistance state HRS, referred to as H and the low-resistance state LRS, referred to as L, and the resistance value range of the high-resistance state is 2000Ω~4000Ω , the resistance value range of the low resistance state is 50Ω~200Ω; the memristor of the present invention based on the ful...
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