High-voltage LDO (Low Dropout Regulator) circuit with clamping current limiting function

A current-limiting and functional technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of high and easily damaged output drive tube grid-source voltage, large area, and low performance, so as to optimize circuit performance and reduce Mask layer, the effect of improving the driving ability

Active Publication Date: 2021-09-24
SHENZHEN CYT SEMICON TECH CO LTD
View PDF7 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems of the above-mentioned traditional high-voltage LDO with too large area, low performance, too high gate-source voltage of the output drive tube and easy damage of the output current of the LDO, the present invention proposes A high voltage LDO circuit with clamp current limiting function

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-voltage LDO (Low Dropout Regulator) circuit with clamping current limiting function

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] Below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail:

[0017] A kind of high voltage LDO circuit with clamp current limiting function of the present invention, such as figure 1 As shown, it includes: 3 NMOS transistors M1, M2, M3, 4 resistors R1, R2, R3, R4, capacitor C1, 4 Zener diodes D1, D2, D3, D4 and error amplifier AMP; among them,

[0018] The drain of the first NMOS transistor M1 is connected to the first resistor R1 as the input terminal VIN; the input terminal VIN is connected to the reverse terminal of the first Zener diode D1 and the second NMOS transistor M2 through the first resistor R1 and the second resistor R2 in turn. The gate of the input terminal VIN is connected to the gate of the first NMOS transistor M1 through the first resistor R1;

[0019] The forward end of the first voltage stabilizing diode D1 is connected to the reverse end of the second voltage stabilizing diode D2; the forward end ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a high-voltage LDO (Low Dropout Regulator) circuit with a clamping current limiting function. The high-voltage LDO circuit is used for solving problems that a traditional high-voltage LDO is too large in area and not high in performance, an output driving tube is too high in gate-source voltage and prone to being damaged, and the output current of the LDO is limited. The circuit comprises three NMOS (N-channel Metal Oxide Semiconductor) tubes M1 to M3, four resistors R1 to R4, a capacitor C1, four voltage stabilizing diodes D1 to D4 and an error amplifier AMP; three voltage stabilizing diodes are connected in series at an input end to reduce an input high voltage to a low voltage range, a circuit can be designed by adopting a lower voltage-resistant device, a grid electrode and a source electrode of an output driving tube are connected with the voltage stabilizing diodes, and a purpose of limiting the output current is achieved by adopting the stabilized voltage value. A photomask layer is reduced while the driving capability is improved, the circuit is simple, and cost can be reduced.

Description

technical field [0001] The invention relates to electronic circuit technology, in particular to a high-voltage LDO circuit with clamping and current-limiting functions. Background technique [0002] LDO (Low Dropout Linear Regulator) is the core module in power management, which can realize voltage conversion and output stable power supply voltage. With the development of the scale of integrated circuits, the volume and weight of electronic equipment are getting smaller and smaller, which puts forward higher and higher requirements for the miniaturization of power supply circuits. If the area of ​​the LDO can be reduced well, the area of ​​the chip can be effectively reduced. This not only meets the requirement of miniaturization of the power supply circuit, but also controls the chip cost well. [0003] The basic structure of LDO includes: feedback resistor network, output drive tube and error amplifier. In order to meet the demand for operating voltage in high-voltage a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/625
CPCG05F1/625
Inventor 陈玉鹏李林喜晋丁亥李江山
Owner SHENZHEN CYT SEMICON TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap