Method for preparing high-thermal-conductivity graphene film through autocatalytic growth

A high thermal conductivity graphite, self-catalysis technology, applied in graphene, chemical instruments and methods, inorganic chemistry and other directions, can solve the problem of low thermal conductivity of graphene film, and achieve the effect of high thermal conductivity and enhanced thermal conductivity

Pending Publication Date: 2021-09-07
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims at the problem that the thermal conductivity of the graphene film prepared by the existing method for preparing the high thermal conductivity graphene film is not high, and provides a method for preparing the high thermal conductivity graphene film by self-catalytic growth

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A self-catalytic process for preparing high thermal growth of graphene film, comprising the steps of:

[0027] The first step manner using a stirred, stirring speed of 1200 revolutions / min, the single graphene oxide to graphene oxide dispersion;

[0028] A second step, through a coating process, the film formed a monolayer graphene oxide, having a thickness of 50 microns;

[0029] In the third step, the second step is placed in the carbonization furnace, which is raised to 250 ° C to obtain a thin film that removes partial oxygen atoms, and residual defective structures;

[0030] When the fourth step, continue to heat up, temperature was raised to 1000 ℃, methane gas into the carbonization process, and in an amount of 10mL / min, IH carbonization time;

[0031] A fifth step, defects in the graphene carbon source such as an atmosphere of carbon plasma atmosphere generated repair, grown into large graphene;

[0032] In the sixth step, the growth of large graphite is placed ...

Embodiment 2

[0035] A self-catalytic process for preparing high thermal growth of graphene film, comprising the steps of:

[0036] The first step, using the mode stirring, stirring speed of 5200 revolutions / min, the single graphene oxide to graphene oxide dispersion;

[0037] A second step, through a coating process, the film formed a monolayer graphene oxide, having a thickness of 120 microns;

[0038] In the third step, the second step is placed in the carbonization furnace, which is raised to 250 ° C to obtain a thin film that removes partial oxygen atoms, and residual defective structures;

[0039] When the fourth step, continue to heat up, temperature was raised to 1000 ℃, acetylene gas is introduced into the carbonization process, and in an amount of 50mL / min, 3H carbonization time;

[0040] A fifth step, defects in the graphene carbon source such as an atmosphere of carbon plasma atmosphere generated repair, grown into large graphene;

[0041] In the sixth step, the growth of large ...

Embodiment 3

[0044] A self-catalytic process for preparing high thermal growth of graphene film, comprising the steps of:

[0045] The first step, using the mode stirring, stirring speed of 9800 revolutions / min, the single graphene oxide to graphene oxide dispersion;

[0046] A second step, through a coating process, the film formed a monolayer graphene oxide, having a thickness of 200 microns;

[0047] In the third step, the second step is placed in the carbonization furnace, which is raised to 250 ° C to obtain a thin film that removes partial oxygen atoms, and residual defective structures;

[0048] When the fourth step, continue to heat up, temperature was raised to 1000 ℃, carbonized solid carbon source is added, is added in an amount of 50g polyacrylonitrile, carbonized time 5H;

[0049] A fifth step, defects in the graphene carbon source such as an atmosphere of carbon plasma atmosphere generated repair, grown into large graphene;

[0050] In the sixth step, the growth of large graphi...

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Abstract

The invention discloses a method for preparing a high-thermal-conductivity graphene film through autocatalytic growth, belongs to the technical field of graphene materials, and can solve the problems that a graphene film prepared through an existing method for preparing the high-thermal-conductivity graphene film is not high in thermal conductivity coefficient and the like. According to the method, graphene oxide is dispersed into single-layer graphene oxide, and a graphene oxide film is btained through a coating process; in a carbonization furnace, part of oxygen atoms are removed, a film with a defect structure is obtained and left, then intermediate-temperature treatment is performed in a carbon source atmosphere, defect graphene is subjected to autocatalysis to repair defects, graphitization treatment is further performed after growth is performed for a certain time, and under the condition that the temperature is lower than the traditional graphitization temperature of 2800 DEG C, the high heat conductivity coefficient can be achieved, and the highest heat conductivity coefficient can reach 2021 W / (m.K).

Description

Technical field [0001] The present invention belongs to the technical field of the graphene material, particularly relates to a method for preparing highly thermally growing a graphene film autocatalytic. Background technique [0002] Graphene is a single layer of carbon atoms by sp 2 A two-dimensional crystal structure of a hybrid cellular closely packed formation, having high thermal conductivity, excellent electrical and mechanical properties, is considered one of the ideal new thermally conductive material, production method can be summarized as graphene mechanical peeling method, a vapor deposition method, and three types of graphite oxidation-reduction method. Since the redox process is simple and reliable, it is considered to be a very effective method of synthesis of graphene. Hummers method using modified natural oxidation of the graphite and the release can be obtained via ultrasound uniformly dispersed colloidal suspension of graphene oxide, the graphene oxide film can...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184
CPCC01B32/184C01B2204/24
Inventor 李永锋
Owner TAIYUAN UNIV OF TECH
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