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Scribing structure for silicon carbide cutting and online trimming method of scribing structure

A silicon carbide and dicing technology, applied in electrical components, fine working devices, circuits, etc., can solve the problems of blade and SiC wafer material damage, blade and wafer material loss, loss of cutting ability of the blade, etc., to avoid The effect of wafer breakage, saving processing time, and reducing the probability of tool breakage

Active Publication Date: 2021-07-27
ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main problem in the process of cutting SiC wafers with the dicing knife is that it is easy to break the knife. According to theoretical analysis and cutting experience, it can be known that the main reason for the knife breaking is that the material of the SiC wafer is relatively hard, and the diamond abrasive on the surface of the blade is easily broken during the scribing process. If the new diamond abrasive cannot be exposed in time, the blade loses its cutting ability and suddenly breaks, causing damage to the blade and SiC wafer material
[0004] Now the commonly used trimming method for SiC wafer dicing knives is to trim the blade once after the new blade is installed. After cutting a whole wafer, take out the wafer and put it into the trimming board for trimming again. This trimming method not only affects production Efficiency, and it cannot guarantee that the whole wafer will not be broken during the cutting process, which will easily cause the loss of blades and wafer materials
[0005] The Chinese invention patent "a diamond scribing knife for ceramic substrate segmentation and its preparation method" (publication number: CN108129067B) discloses a diamond scribing knife for ceramic substrate segmentation and its preparation method. Diamond, epoxy resin powder, The mixture of silicon carbide, aluminum oxide, titanium oxide fiber, and 4-methylbenzyl alcohol is passed through a 300-mesh sieve to obtain a molding material; the molding material is hot-pressed to obtain a hot-pressed green body; and the hot-pressed green body is solidified to obtain Formed body; process the formed body to obtain a diamond scribing knife for ceramic substrate division; the diamond scribing knife disclosed in the invention can be used for cutting ceramic substrates, with a dimensional accuracy of only 4 μm, and not only has the sharp commonality of a resin bond diamond scribing knife , also has the characteristics of high processing precision, small chipping and avoiding microcracks. Although it solves the technical problem of high-precision segmentation of ceramic substrates, it cannot be trimmed online

Method used

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  • Scribing structure for silicon carbide cutting and online trimming method of scribing structure
  • Scribing structure for silicon carbide cutting and online trimming method of scribing structure

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Embodiment Construction

[0033] The implementation of the present invention will be illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

[0034] see figure 1 . It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understand and read, and are not used to limit the implementation of the present invention. Limiting conditions, so there is no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of the present invention, should still fall within the scope of the present invention. The disclosed technical content must be within the scope covered. At the same time, term...

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Abstract

The invention discloses a scribing structure for silicon carbide cutting and an online trimming method of the scribing structure. An annular knife trimming plate for a scribing knife is provided for the first time, a SiC wafer and the annular knife trimming plate are adsorbed to a ceramic working disc after being pasted to an adhesive film together, and then cutting is carried out in sequence, so that the online trimming function in the cutting process of the SiC wafer scribing knife is achieved; and during each dicing, the annular knife trimming plate is used for knife trimming firstly, then the SiC wafer is diced, and finally the annular knife trimming plate is used for knife trimming again, so that it is guaranteed that a diamond abrasive material on the surface of a cutting edge is exposed, the problem that the scribing knife is suddenly broken due to the fact that the scribing knife loses the cutting capacity is solved, the time for trimming the knife independently is saved, and the probability of knife breakage in the SiC wafer cutting process is also reduced.

Description

technical field [0001] The invention belongs to the technical field of cutting knife manufacturing, and in particular relates to a scribing structure for silicon carbide cutting and an online trimming method thereof. Background technique [0002] Compared with the first and second generation semiconductor materials, the third-generation semiconductor SiC has performance advantages such as wider band gap, higher breakdown electric field, and higher thermal conductivity, and is especially suitable for 5G radio frequency devices and high-voltage power device. [0003] The manufacture of SiC devices is divided into crystal growth, slicing, epitaxy, photolithography, scribing, packaging, etc. The common processing methods in the scribing process are divided into two types: laser cutting and blade cutting. The main problem in the process of cutting SiC wafers with the dicing knife is that it is easy to break the knife. According to theoretical analysis and cutting experience, it ...

Claims

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Application Information

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IPC IPC(8): B28D5/02H01L21/78
CPCB28D5/02H01L21/78
Inventor 张迪邵俊永王战韩雪闫贺亮陈月涛
Owner ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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