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Growth process method of large-diameter high-purity semi-insulating silicon carbide

A process method and semi-insulating technology, which are applied in the field of large-diameter high-purity semi-insulating silicon carbide growth, can solve the problems affecting the yield and technical indicators of the substrate, and the low utilization rate of raw materials, so as to achieve a low nitrogen content and improve the utilization rate. Effect

Active Publication Date: 2021-07-23
BEIJING CENTURY GOLDRAY SEMICON CO LTD
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

The most important thing is that the removal of background dopants and the low utilization rate of raw materials under large diameters have greatly affected the yield and technical indicators of the substrate.

Method used

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  • Growth process method of large-diameter high-purity semi-insulating silicon carbide

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Embodiment 1. Large-diameter high-purity semi-insulating silicon carbide growth process

[0059] Using the thermal field of the dual heating structure and the bottom diffusion structure of the present application, the PVT method is used to grow a high-purity semi-insulating silicon carbide single crystal, and the specific steps are as follows:

[0060] 1. Place the high-purity silicon carbide raw material in the graphite crucible, and the upper part of the crucible is assembled as follows figure 1 The structure of seed holder, 2 seeds, and 3 expansion rings. The exterior is wound with a thermal insulation layer according to the process design. Material selection graphite carbon fiber. The above assembly is called the growth thermal field, and all the graphite materials are high-purity graphite materials, and the purity requirement is <5ppm purified graphite.

[0061] 2. Place the assembly growth heat field completed in step 1 in a single crystal growth furnace, and e...

Embodiment 2

[0070] Embodiment 2. Large-diameter high-purity semi-insulating silicon carbide growth process

[0071] Using the thermal field of the dual heating structure and the bottom diffusion structure of the present application, the PVT method is used to grow a high-purity semi-insulating silicon carbide single crystal, and the specific steps are as follows:

[0072] 1. Place the high-purity silicon carbide raw material in the graphite crucible, and the upper part of the crucible is assembled as follows figure 1 The structure of seed holder, 2 seeds, and 3 expansion rings. The exterior is wound with a thermal insulation layer according to the process design. Material selection graphite carbon fiber. The above assembly is called the growth thermal field, and all the graphite materials are high-purity graphite materials, and the purity requirement is <5ppm purified graphite.

[0073] 2. Place the assembly growth heat field completed in step 1 in a single crystal growth furnace, and e...

Embodiment 3

[0082] Embodiment 3. Large-diameter high-purity semi-insulating silicon carbide growth process

[0083] Using the thermal field of the dual heating structure and the bottom diffusion structure of the present application, the PVT method is used to grow a high-purity semi-insulating silicon carbide single crystal, and the specific steps are as follows:

[0084] 1. Place the high-purity silicon carbide raw material in the graphite crucible, and the upper part of the crucible is assembled as follows figure 1 The structure of seed holder, 2 seeds, and 3 expansion rings. The exterior is wound with a thermal insulation layer according to the process design. Material selection graphite carbon fiber. The above assembly is called the growth thermal field, and all the graphite materials are high-purity graphite materials, and the purity requirement is <5ppm purified graphite.

[0085] 2. Place the assembly growth heat field completed in step 1 in a single crystal growth furnace, and e...

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Abstract

The invention provides a growth process method of large-diameter high-purity semi-insulating silicon carbide, which comprises the following steps: (1) preparing growth materials, and completing the assembly of seed crystals, raw materials and a thermal field; and (2) starting process growth, and completing the processes of impurity removal, heating, growth, cooling and furnace shutdown. According to the method disclosed by the invention, the high-purity silicon carbide single crystal is easy to obtain through the technical means of hydrogen introduction, crucible internal structure design, optimized seed crystal selection, heating structure combination design, optimized process parameters and the like, and semi-insulating single crystal preparation with high technical indexes, high raw material utilization rate and low cost is realized.

Description

technical field [0001] The invention relates to the growth of silicon carbide single crystal, in particular to a large-diameter high-purity semi-insulating silicon carbide growth method. Background technique [0002] The third-generation semiconductor SiC has a wide bandgap (2.2~3.3 eV, 2~3 times that of Si), high thermal conductivity (3~3.3 times that of Si), high breakdown field strength (10 times that of Si), high saturation Electron drift rate ( , 2.5 times that of Si), chemical stability, high hardness and wear resistance, and high bonding energy. SiC devices can be used in important fields such as new energy trams, radar, 5G communications, aerospace vehicles, marine exploration, earthquake prediction, oil drilling, machining, and automotive electronics. An important supporting technology for national economic development and national territorial security. As one of the important representatives of the third-generation semiconductor materials, its excellent propertie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/002C30B29/36
Inventor 张云伟何丽娟陈颖超杨丽雯程章勇李天运韦玉平李百泉靳丽婕
Owner BEIJING CENTURY GOLDRAY SEMICON CO LTD
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