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Quantum dot light-emitting diode and its preparation method

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem that quantum dots are difficult to balance dispersion and charge injection and transmission capabilities, so as to reduce aggregation and settlement and improve flexibility , to avoid the effect of reunion

Active Publication Date: 2022-06-21
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem that quantum dots are difficult to balance good dispersion and charge injection and transport capabilities

Method used

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  • Quantum dot light-emitting diode and its preparation method
  • Quantum dot light-emitting diode and its preparation method

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preparation example Construction

[0028] like figure 1 As shown, the first aspect of the embodiment of the present invention provides a method for preparing a quantum dot light-emitting diode, including the following steps:

[0029] S01. Provide a bottom electrode substrate, and form a first nano-column structure on the bottom electrode surface of the bottom electrode substrate;

[0030] S02. Bind quantum dots containing initial ligands on the surface of the first nano-pillar structure, provide target ligands for exchange with the initial ligands on the surface of the quantum dots, and prepare a quantum dot film bound with target ligands.

[0031] In the method for preparing a quantum dot light-emitting diode provided by the embodiment of the present invention, first nano-column structure is formed on the bottom electrode surface of the bottom electrode substrate; then quantum dots containing initial ligands are combined on the surface of the first nano-column structure, and the combination The quantum dots w...

Embodiment approach

[0064] In this embodiment, the first nano-column structure is not used to directly bind quantum dots and regulate the arrangement of quantum dots, but to form second nano-columns corresponding to the first nano-column structure for the surface of the first functional layer Structure provides the structural basis. It is equivalent to forming a first functional layer with a uniform thickness on the surface of the first nano-pillar structure to obtain the second nano-pillar structure, and the gaps between the second nano-pillar structures are used to accommodate quantum dots. At this time, compared with the first nanopillars, the gaps between the second nanopillars are smaller, but the maximum radial dimension of the second nanopillars increases. Specifically, the l 1 , l 2 Satisfaction: l 2 1 ; at the same time, the s 1 , s 2 Satisfy: s 1 2 .

[0065] In order to make the quantum dots deposited in the gaps of the second nanopillars have good dispersibility and stability, e...

Embodiment 1

[0091] like Figure 2-11 As shown, a preparation method of a quantum dot light-emitting diode comprises the following steps:

[0092] Preparation of ITO electrodes on transparent substrates;

[0093] A polystyrene deionized water / ethanol mixture with a polystyrene mass percentage concentration of 0.1% to 10% was prepared, and a monolayer periodic ordered / disordered PS nanosphere mask was prepared on the ITO surface of the ITO electrode by the self-organization method. The cross-sectional view of the single-layer polystyrene nanosphere film prepared on the surface of the ITO layer is shown in Fig. figure 2 The top view of the single-layer polystyrene nanosphere film prepared on the surface of the ITO layer is shown in image 3 shown. RIE etching was performed on the prepared monolayer periodically ordered / disordered polystyrene nanosphere film to increase the gap between polystyrene nanospheres to obtain a polystyrene nanosphere mask, and polystyrene was formed on the surfa...

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Abstract

The invention provides a method for preparing a quantum dot light-emitting diode, comprising the following steps: providing a bottom electrode substrate, forming a first nanocolumn structure on the surface of the bottom electrode of the bottom electrode substrate; For the quantum dots containing the initial ligands, the target ligands are used to carry out ligand exchange on the quantum dots bound with the initial ligands on the surface, so as to prepare the quantum dot films bound with the target ligands. The preparation method of the quantum dot light-emitting diode provided by the invention can obtain the quantum dot thin film with good dispersibility and charge injection and transport ability.

Description

technical field [0001] The invention belongs to the technical field of display, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot electroluminescent devices (QLEDs) have shown great application potential due to their low turn-on voltages, narrow emission peaks, and tunable emission wavelengths. QLED adopts a sandwich structure, including an anode and a cathode, and a quantum dot light-emitting layer arranged between the anode and the cathode. Currently, QLEDs generally include an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode. Among them, the preparation of quantum dot light-emitting layer is particularly important. [0003] In the existing QLED, electrons and holes are provided by the injection layer, pass through the transport layer, and finally perform compound light emission in the quantum dot l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/50
CPCH10K71/12H10K50/14H10K71/00H10K50/115
Inventor 雷卉刘文勇杨一行
Owner TCL CORPORATION
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