Semiconductor structure and manufacturing method thereof

Abstract

The embodiment of the invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a first substrate which comprises a bit line, a transistor and a first contact structure which are stacked, and a second substrate which is bonded with the first substrate, and comprises a second contact structure and a capacitor which are stacked, wherein the second contact structure is in direct contact with the first contact structure; the first contact structure is provided with a first surface facing the second substrate and a second surface opposite to the first surface, and the area of the first surface is larger than that of the second surface; and the second contact structure has a third surface facing the first substrate and a fourth surface opposite to the third surface, and the area of the third surface is larger than that of the fourth surface. According to the embodiment of the invention, the manufacturing process difficulty of the DRAM can be reduced, the production cycle is shortened, and the performance of the DRAM is improved.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] A dynamic random access memory (Dynamic Random Access Memory, DRAM for short) in a semiconductor structure is a semiconductor memory widely used in computer systems. The main working principle of DRAM is to use the amount of charge stored in the capacitor to represent whether a binary bit (bit) is 1 or 0. [0003] However, in order to improve the integration of semiconductor integrated circuits, the feature size of DRAM is getting smaller and smaller; thus making the manufacturing process of DRAM more and more difficult, the production cycle is getting longer and longer, and its performance needs to be further improved. Contents of the invention [0004] Embodiments of the present invention provide a semiconductor structure and a manufacturing method thereof, so a...

AI Technical Summary

Problems solved by technology

[0003]However, in order to improve the integration of semiconductor integrated circuits, the feature size of DRAM is getting smaller and smaller; thus making the manufacturing process of DRAM more and more difficult and the production cycle shorter It is getting longer and longer, and its performance needs to be further improved.

Images