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Organic near-infrared light detection diode with low dark current

A technology for detecting diodes and near-infrared light, which is applied in organic semiconductor devices, circuits, photovoltaic power generation, etc., can solve the problems of large dark current and achieve the effects of reducing injection current, reducing current generation, and good tolerance

Active Publication Date: 2021-06-18
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] As can be seen from the above examples, compared to conventional inorganic photodetection diodes (typically below 1nA cm -2 ), the dark current of organic near-infrared light detection diodes is still relatively large

Method used

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  • Organic near-infrared light detection diode with low dark current

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The transparent conductive glass having a strip-like ITO (anode) is sequentially cleaned with a cleaning agent, deionized water, acetone and isopropanol ultrasonic oscillators, dry, then treated with ultraviolet ozone for 15 minutes; then will contain crosslinking The agent mass fraction is 10%, the total concentration is 6.6 mg ml -1 The polytpd solution was spin coated on the conductive glass substrate, the rotational speed was 1000 rpm, the spin coating time was 60 seconds, and then the ultraviolet light was taken for 10 minutes, and finally at 150 ° C for 20 minutes in the air. The resulting polytpd film thickness was 24 nm. The film was then transferred into the glove box and deposited by a spin coating method by a spin coating method, and the thickness was 180 nm. Thereafter, use the vapor deposition apparatus to coastal plating 60 And LIF is plated onto the light absorbing layer by volume ratio 1: 2, the thickness is 40 nm. Finally, a 100 nm thick Al electrode (catho...

Embodiment 2

[0019] The transparent conductive glass having a strip-like ITO (anode) is sequentially cleaned with a cleaning agent, deionized water, acetone and isopropanol ultrasonic oscillators, dry, then treated with ultraviolet ozone for 15 minutes; then will contain crosslinking The agent mass fraction is 10%, the total concentration is 6.6 mg ml -1 The polytpd solution was spin coated on the conductive glass substrate, the rotational speed was 1000 rpm, the spin coating time was 60 seconds, and then the ultraviolet light was taken for 10 minutes, and finally at 150 ° C for 20 minutes in the air. The resulting polytpd film thickness was 24 nm. The film was then transferred into the glove box and deposited by a spin coating method by a spin coating method, and the thickness was 180 nm. Thereafter, use the vapor deposition apparatus to coastal plating 60 And LIF is deposited on the light absorbing layer by volume ratio of 1: 4, the thickness is 40 nm. Finally, a 100 nm thick Al electrode (c...

Embodiment 3

[0022] The transparent conductive glass having a strip-like ITO (anode) is sequentially cleaned with a cleaning agent, deionized water, acetone and isopropanol ultrasonic oscillators, dry, then treated with ultraviolet ozone for 15 minutes; then will contain crosslinking The agent mass fraction is 10%, the total concentration is 6.6 mg ml -1 The polytpd solution was spin coated on the conductive glass substrate, the rotational speed was 1000 rpm, the spin coating time was 60 seconds, and then the ultraviolet light was taken for 10 minutes, and finally at 150 ° C for 20 minutes in the air. The resulting polytpd film thickness was 24 nm. The film was then transferred into the glove box and deposited by a spin coating method by a spin coating method, and the thickness was 180 nm. Thereafter, use the vapor deposition apparatus to coastal plating 60 The LIF is concentrated on the light absorbing layer by volume ratio 1: 6, the thickness is 40 nm. Finally, a 100 nm thick Al electrode (c...

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Abstract

The invention discloses an organic near-infrared light detection diode with low dark current. The organic near-infrared light detection diode with the low dark current comprises a substrate, an anode, an electron blocking layer, a light absorption layer, a hole blocking layer and a cathode, the electron blocking layer is cross-linked PolyTPD, and the hole blocking layer is a mixture of evaporated C60 and lithium fluoride. According to the electron blocking layer and the hole blocking layer, high external quantum efficiency can be kept, and meanwhile injection current and generation current under reverse bias voltage can be remarkably restrained. Finally, the organic near-infrared light detection diode provided by the invention realizes dark current lower than 1nA cm < 2 > and 65% external quantum efficiency, and the specific detection rate (D *) is 850-940nm and reaches more than 10<13>Jones.

Description

Technical field [0001] The present invention relates to a near-infrared light detecting diode, and more particularly to an organic near-infrared light detecting diode of a low dark current. Background technique [0002] Organic near-infrared light detection has broad application prospects in medical care, biomara, and other fields. However, compared to conventional inapplying optical detection diodes, organic optical detecting diodes tend to have a high dark current, resulting in a lower ratio detection rate. How to reduce organic light detection diode dark currents by means of molecular structure design, device design, causing extensive attention from researchers. [0003] In 2010, Xiong Gong et al. Xiong Gong et al. To Santa Barbara, California, using broadband polymer PS-TPD-PFCB as an electronic barrier layer, using C 60 As the hole blocking layer for the organic near-infrared light detection diode for fullerene, the prepared device is reduced to 4NA cm under -1V bias. -2 (Se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46C08J3/24
CPCC08J3/24H10K85/211H10K30/00H10K2102/00Y02E10/549
Inventor 陈红征杨伟涛裘伟明
Owner ZHEJIANG UNIV
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