Assembling method for target material and copper back plate
An assembly method and copper backplane technology, which is applied in the field of target assembly, can solve the problems of long residence time on the sputtering surface, easy rusting of copper and air, and increased difficulty in processing, so as to save manpower and material resources, process optimization, contact short time effect
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Embodiment 1
[0041] This embodiment provides a method for assembling a target material and a copper backplane, and the method includes the following steps:
[0042] (1) Pretreatment of titanium target and copper backplane;
[0043] The pretreatment method of the titanium target includes: turning the end thread on the welding surface of the target, the pitch of the end thread is 0.4*0.2, ultrasonically cleaning the welding surface of the target with IPA liquid for 10 minutes and vacuum Drying, the vacuum degree is not higher than 0.01Pa, and the time is 60min;
[0044] The pretreatment method of the copper backplane includes: sequentially performing OP2 turning on the backplane surface and OP1 turning welding surface on the copper backplane, the pitch of the OP1 turning welding surface is 0.4*0.2, and performing on the copper backplane Ultrasonic cleaning of IPA liquid for 10 minutes and vacuum drying, the vacuum degree is not higher than 0.01Pa, and the time is 60 minutes;
[0045] (2) A...
Embodiment 2
[0052] This embodiment provides a method for assembling a target material and a copper backplane, and the method includes the following steps:
[0053] (1) Pre-treat the target and copper backplane;
[0054] The pretreatment method of the titanium target includes: turning the end thread on the welding surface of the target, the pitch of the end thread is 0.5*0.1, ultrasonically cleaning the welding surface of the target with IPA liquid for 15 minutes and vacuum Drying, the vacuum degree is not higher than 0.01Pa, and the time is 90min;
[0055] The pretreatment method of the copper backplane includes: sequentially performing OP2 turning on the backplane surface and OP1 turning welding surface on the copper backplane, the pitch of the OP1 turning welding surface is 0.5*0.1, and performing on the copper backplane Ultrasonic cleaning of IPA liquid for 10 minutes and vacuum drying, the vacuum degree is not higher than 0.01Pa, and the time is 60 minutes;
[0056] (2) Assembling a...
Embodiment 3
[0063] This embodiment provides a method for assembling a target material and a copper backplane, and the method includes the following steps:
[0064] (1) Pretreatment of titanium target and copper backplane;
[0065] The pretreatment method of the titanium target includes: turning the end thread on the welding surface of the target, the pitch of the end thread is 0.42*0.16, ultrasonically cleaning the welding surface of the target with IPA liquid for 15 minutes and vacuum Drying, the vacuum degree is not higher than 0.01Pa, and the time is 90min;
[0066] The pretreatment method of the copper backplane includes: sequentially performing OP2 turning on the backplane surface and OP1 turning welding surface on the copper backplane, the pitch of the OP1 turning welding surface is 0.42*0.16, and performing on the copper backplane Ultrasonic cleaning of IPA liquid for 15 minutes and vacuum drying, the vacuum degree is not higher than 0.01Pa, and the time is 75 minutes;
[0067] (...
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