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A double-heterojunction polarization-enhanced quasi-vertical gan HEMT device

A polarization-enhanced, double-heterojunction technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., to solve problems such as the inability to meet the requirements of device enhancement mode operation and weaken the advantages of high-frequency operation of GaN devices , to ensure the normal realization of the function, avoid the influence of the overlay error, and improve the pressure resistance.

Active Publication Date: 2022-03-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the field plate will introduce additional parasitic capacitance, which will weaken the advantages of high-frequency operation of GaN devices; the literature A.Nakajima et al.GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept uses double heterojunction polarization to induce two-dimensional Electron gas and two-dimensional hole gas, electron gas and hole gas are depleted in the withstand voltage state, and the fixed polarized charges with opposite electrical properties at the double heterojunction interface compensate each other and modulate the electric field distribution in the drift region , to achieve device withstand voltage optimization
However, this structure still cannot meet the requirements of enhanced operation of the device

Method used

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  • A double-heterojunction polarization-enhanced quasi-vertical gan HEMT device
  • A double-heterojunction polarization-enhanced quasi-vertical gan HEMT device
  • A double-heterojunction polarization-enhanced quasi-vertical gan HEMT device

Examples

Experimental program
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Effect test

Embodiment 1

[0021] Such as figure 1 As shown, this example includes from bottom to top: a substrate 1 , a buffer layer 2 , a barrier layer 3 and a cap layer 4 . It is characterized in that: the buffer layer 2 is formed by stacking GaN buffer layer 21 and GaN channel 22 from bottom to top, and the cap layer 4 includes UID-GaN layer 41 and P-type GaN layer 42 from bottom to top ; The left end of the cap layer 4 is provided with a metal gate 5, and the metal gate 5 passes through the cap layer 4, the barrier layer 3 and the GaN trench downward from the upper surface of the cap layer 4 22, and separated from the cap layer 4, the barrier layer 3 and the buffer layer 2 by the insulating material layer 6, the lead-out end of the metal grid 5 is the gate; the upper surface of the cap layer 4 is from An N-type GaN layer 7 and a first conductive material 8 are provided from left to right, and the left side of the N-type GaN layer 7 is aligned with the interface between the insulating material laye...

Embodiment 2

[0025] Such as figure 2 As shown, the difference between this example and the structure of Example 1 is that the stacked structure of the N-type GaN conductive region 7 and the second conductive material 9 described in this example and the first conductive material 8 are perpendicular to the device The directions of the structural sections are arranged alternately.

[0026] This example works as follows:

[0027]The electrodes are arranged alternately along the direction perpendicular to the device structure section, while saving a certain layout area, the hole current and electron flow can be adjusted by adjusting the ratio of the lengths of the two electrodes along the direction perpendicular to the device structure section. the size of the current.

Embodiment 3

[0029] This example includes a self-aligned etched gate approach for a quasi-vertical GaN HEMT device with double heterojunction polarization enhancement:

[0030] Such as image 3 As shown, using an epitaxial process, a buffer layer 2, a barrier layer 3, a cap layer 4 and an N-type GaN layer 7 are sequentially grown from bottom to top on a Si substrate 1 with a (111) crystal plane;

[0031] Such as Figure 4 As shown, a second conductive material 9 is formed on the upper surface of the N-type GaN layer 7 by using a lift-off process;

[0032] Such as Figure 5 As shown in FIG. 1 , using an etching process, a first groove is self-aligned and etched at one end of the associated N-type GaN layer 7 along the edge of the second conductive material 9, and the first groove penetrates the cap layer in sequence along the vertical direction of the device. 4. The barrier layer 3 extends into the buffer layer 2 .

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Abstract

The invention belongs to the technical field of power semiconductors, and in particular relates to a quasi-vertical GaN HEMT device with double heterojunction polarization enhancement. Compared with the traditional GaN HEMT, the present invention adopts the P-type GaN layer to increase the two-dimensional hole gas concentration, and the two-dimensional electron gas and hole gas at the double heterojunction interface are depleted respectively when withstand voltage, leaving the opposite polarity The polarized charges are fixed, and the electric field lines point from the positive charges to the negative charges, resulting in a quasi-rectangular distribution of the lateral electric field; at zero bias, the P-type GaN layer and the two-dimensional hole gas jointly block the vertical channel of the device, when the P-type GaN layer is Depletion produces an inversion layer and the device conducts normally when the two-dimensional hole gas is depleted. The beneficial effect of the invention is that, compared with traditional HEMT devices, the invention has the advantages of high threshold voltage and high breakdown voltage.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and relates to a quasi-vertical GaN HEMT (High Electron Mobility Transistor, high electron mobility transistor) with double heterojunction polarization enhancement. Background technique [0002] Compared with Si, GaN has the advantages of wider band gap and higher electron saturation velocity, and is currently a research hotspot in the semiconductor industry. Epitaxial AlGaN / GaN heterojunction materials on Si substrates are used to make HEMT devices, which can achieve a good balance in terms of performance, cost and reliability, and are widely used in the fields of radio frequency / microwave and power electronics. The material properties of GaN make GaN-based devices have smaller scale and parasitic effects than Si-based devices, which can significantly increase the operating frequency of devices. For electronic electronic circuits, new topologies can be realized or the size of passiv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/778H01L21/335
CPCH01L29/0611H01L29/0684H01L29/7783H01L29/66462
Inventor 罗小蓉郗路凡魏杰孙涛邓思雨贾艳江廖德尊张成
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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