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Silicon nitride-based heating body and preparation process thereof

A preparation process and technology for a silicon nitride substrate are applied in the field of heating body components to achieve the effects of fast reaction, simple preparation process and material cost saving

Inactive Publication Date: 2021-05-28
宁波云川环保科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing technology usually starts from the silicon nitride matrix composition and preparation method, and improves the heating body by optimizing the matrix composition, but the research on improving the performance of the heating body from the heating body itself and its preparation process has not been reported yet.

Method used

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  • Silicon nitride-based heating body and preparation process thereof
  • Silicon nitride-based heating body and preparation process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A heating body, which includes a silicon nitride substrate and a tin oxide film coated on the surface of the substrate, specifically prepared through the following steps:

[0025] S1. Cutting the silicon nitride substrate into a size with an outer diameter of 10 mm and a length of 80 mm, and then grinding and polishing to a surface roughness of Ra=1.2-1.6 μm;

[0026] S2. Place the pretreated silicon nitride substrate in a sintering furnace at 1100° C. for sintering in argon for 4 hours;

[0027] S3, prepare the reaction solution according to the following mass percentage: SnCl 4 .5H 2 O: 96.2%, SbCl 3 : 0.8%, CuO: 0.11%, MgO: 0.03%, FeO: 0.022%, HF: 0.024%, ethanol: 0.038%, the balance is deionized water and unavoidable impurities; pass the prepared reaction solution through 0.3MPa Air pressure atomization forms small droplets with an atomization volume of 200mL / m, and the small droplets are transferred to the surface of the silicon nitride substrate at a temperatur...

Embodiment 2

[0030] A heating body, which includes a silicon nitride substrate and a tin oxide film coated on the surface of the substrate, specifically prepared through the following steps:

[0031] S1. Cut the silicon nitride substrate into a size with an outer diameter of 12 mm and a length of 90 mm, and then polish and polish it to a surface roughness of Ra=1.2-1.6 μm;

[0032] S2. Place the pretreated silicon nitride substrate in a sintering furnace at 1150° C. for sintering in argon for 3 hours;

[0033] S3, prepare the reaction solution according to the following mass percentage: SnCl 4 .5H 2 O: 96.8%, SbCl 3 : 0.85%, CuO: 0.12%, MgO: 0.035%, FeO: 0.023%, HF: 0.028%, ethanol: 0.04%, the balance is deionized water and unavoidable impurities; pass the prepared reaction solution through 0.35MPa Air pressure atomization forms small droplets with an atomization volume of 220mL / m, and the small droplets are transferred to the surface of the silicon nitride substrate at a temperature of...

Embodiment 3

[0036] A heating body, which includes a silicon nitride substrate and a tin oxide film coated on the surface of the substrate, specifically prepared through the following steps:

[0037] S1. Cutting the silicon nitride substrate into a size with an outer diameter of 14 mm and a length of 100 mm, and then grinding and polishing to a surface roughness of Ra=1.2-1.6 μm;

[0038] S2. Place the pretreated silicon nitride substrate in a sintering furnace at 1200° C. for sintering in argon for 3 hours;

[0039] S3, prepare the reaction solution according to the following mass percentage: SnCl 4 .5H 2O: 97.5%, SbCl 3 : 0.9%, CuO: 0.14%, MgO: 0.04%, FeO: 0.025%, HF: 0.03%, ethanol: 0.042%, the balance is deionized water and unavoidable impurities; pass the prepared reaction solution through 0.4MPa Air pressure atomization forms small droplets with an atomization volume of 250mL / m, and the small droplets are transferred to the surface of the silicon nitride substrate at a temperature...

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Abstract

The invention relates to the technical field of heating body components, in particular to a silicon nitride-based heating body and a preparation process thereof. The preparation method of the heating body comprises the following steps of S1, carrying out cutting, grinding and polishing pretreatment on a silicon nitride substrate, S2, placing the pretreated silicon nitride substrate in a sintering furnace to be sintered in an inert atmosphere, S3, atomizing the reaction liquid through air pressure to form small liquid drops, transferring the small liquid drops to the surface of a preheated silicon nitride substrate through carrier gas, and performing thermal decomposition to form a tin oxide film to coat the surface of the substrate, and S4, carrying out heat treatment on the silicon nitride substrate coated with the tin oxide film to obtain the heating body. According to the silicon nitride-based heating body, the compressive strength reaches up to 1300 MPa, the bearable power density reaches up to 100 W / cm<2> and is far higher than that of a traditional heating body based on a quartz tube, the heating body is fast in reaction and small in size, the material cost is saved, and the heating efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of heating body components, in particular to a silicon nitride-based heating body and a preparation process thereof. Background technique [0002] At present, the mainstream non-metallic heating elements include three materials: crystal, glass and ceramics. Non-metallic heating elements usually include a substrate and a heating film loaded on the surface of the substrate. The principle is to coat a layer of heating film on the outer layer of the substrate such as crystal (quartz) tubes and glass tubes. When the power is turned on, the heating film converts electrical energy into heat. , transfer heat to the substance to be heated through a high thermal conductivity matrix, such as drinking water, oil, etc. Although the glass heating element can effectively prevent the generation of scale, it has a low melting point, is not resistant to sudden heat and sudden cooling, and is easy to burst, so it is rarely us...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/457C04B35/622C04B41/87
CPCC04B35/457C04B35/62218C04B41/009C04B41/87C04B41/505
Inventor 操险峰
Owner 宁波云川环保科技有限公司
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