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Perovskite nanowire array and preparation method thereof

A nanowire array, perovskite technology, applied in nanotechnology, nanotechnology, nano-optics, etc., can solve the problems of complexity, difficulty in obtaining perovskite nanowire arrays, complicated operation procedures, etc., and reduce equipment costs. , the effect of improving the quality of single crystal and improving the conversion efficiency

Inactive Publication Date: 2021-05-18
JIHUA LAB
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] However, to prepare nanowire arrays, inkjet printing or micro-imprinting is required for processing. Both processing methods require expensive printing equipment and complicated operating procedures, and the process of obtaining perovskite nanowire arrays is difficult. and complicated

Method used

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  • Perovskite nanowire array and preparation method thereof
  • Perovskite nanowire array and preparation method thereof
  • Perovskite nanowire array and preparation method thereof

Examples

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Embodiment 1

[0066] S1. Prepare a silicon pillar template with several silicon pillar arrays, wherein the silicon pillar width is 2 μm and the interval is 5 μm, and the silicon pillar template is selectively modified to make the silicon pillar side walls hydrophobic and the top hydrophilic;

[0067] S2. Utilizing R)-1-(4-chlorophenyl) ethylamine lead iodide perovskite dissolved in dimethyl sulfoxide (DMSO) as a solvent to prepare a perovskite solution, the preparation concentration is 30mg / mL;

[0068] S3. Use a pipette gun to draw the perovskite solution, and the single suction volume is 7 μL dropwise added to the top of the silicon column of the silicon column template;

[0069] S4. Take the silicon dioxide substrate, and cover the silicon dioxide substrate on the top of the silicon pillar template and press it tightly, so that the perovskite solution located on the top of the silicon pillar template is attached to the bottom surface of the substrate to form a substrate-perovskite solutio...

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Abstract

The invention discloses a perovskite nanowire array and a preparation method thereof, and the preparation method comprises the following steps: S1, preparing a silicon column template with a plurality of silicon column arrays, and carrying out the selective modification of the silicon column template; S2, preparing a perovskite solution; S3, dropwise adding a perovskite solution to the top end of the silicon column of the silicon column template; S4, covering the top of the silicon column template with a substrate to form a sandwich assembly system; S5, carrying out heating and drying treatment on the sandwich assembly system; S6, standing and cooling the heated and dried sandwich assembly system; and S7, dismounting the sandwich assembly system. According to the preparation method, the equipment cost is effectively reduced, and the perovskite nanowire array of which the frequency doubling conversion efficiency is far higher than that of the perovskite polycrystalline thin film is prepared and obtained simply and universally at the same time.

Description

technical field [0001] The invention relates to the field of nonlinear optical materials, and mainly relates to a perovskite nanowire array and a preparation method thereof. Background technique [0002] Perovskite refers to a class of ceramic oxides, whose general molecular formula is ABX3, where the A and B sites are cations of different sizes, and X is a halide anion (X=Cl, Br, I), which can be used in nonlinear optics Applications; nonlinear optical materials refer to materials whose optical properties depend on the intensity of incident light, and can convert the frequency of light; nonlinear optical materials are often used to convert the frequency of incident light to obtain lasers with frequencies different from the frequency of incident light, so as to achieve The purpose of optical frequency conversion. [0003] When perovskite is used as a nonlinear optical material, it is generally used as a perovskite polycrystalline film. The molecular stacking direction of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/00H01S5/00B82Y20/00B82Y30/00B82Y40/00G02F1/355
CPCH01S3/0092H01S5/0092B82Y30/00B82Y40/00B82Y20/00G02F1/3551
Inventor 高寒飞吴雨辰江雷
Owner JIHUA LAB
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