Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Unbiased photoelectrochemical hydrogen production system based on InGaN nanorod photoelectrode on graphene and application thereof

A photoelectrochemical and hydrogen production system technology, applied in electrodes, nanotechnology, gaseous chemical plating, etc., can solve the problems of inability to achieve broad spectrum absorption, inability to form tandem electrodes, and opaque substrates. Biased photoelectric water splitting to produce hydrogen, improve photoelectric conversion efficiency, and inhibit the effect of recombination

Active Publication Date: 2021-05-07
SOUTH CHINA UNIV OF TECH
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, InGaN nanopillars are mainly grown on opaque Si substrates, which has certain obstacles to the construction of unbiased photocatalytic systems, mainly reflected in the opacity of the substrates, and the inability to form series electrodes, so that it is impossible to achieve wide-spectrum photocatalysis. absorption and generation of high photovoltage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Unbiased photoelectrochemical hydrogen production system based on InGaN nanorod photoelectrode on graphene and application thereof
  • Unbiased photoelectrochemical hydrogen production system based on InGaN nanorod photoelectrode on graphene and application thereof
  • Unbiased photoelectrochemical hydrogen production system based on InGaN nanorod photoelectrode on graphene and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042]A construction of an unbiased photoelectrochemical hydrogen production system based on InGaN nanocolumn photoelectrodes on graphene, comprising the following steps:

[0043] (1) Preparation of the photoanode: use sapphire as the substrate, transfer a single-layer graphene film on the substrate by wet transfer, spin-coat PMMA solution after drying to flatten the graphene, and dry at 120 degrees Celsius for 5 minutes. Soak in acetone for 3 times, each time for 15 minutes, soak in isopropanol for 5 minutes to wash away PMMA, and obtain substrate / graphene. Then, using the molecular beam epitaxy growth process, the temperature of the substrate / graphene is controlled at 980°C, the rotation speed of the substrate / graphene is 10r / min, and the equivalent pressure of the Ga beam is 1×10 -7 Torr, In beam equivalent pressure is 2.0×10 -8 Torr, the nitrogen flow rate is 2 sccm, the plasma source power is 400W, the growth time is 3h, and the In atoms of the obtained InGaN nanocolumns...

Embodiment 2

[0051] A construction of an unbiased photoelectrochemical hydrogen production system based on InGaN nanocolumn photoelectrodes on graphene, comprising the following steps:

[0052] (1) Preparation of the photoanode: Use quartz as the substrate, transfer the double-layer graphene film on the substrate by wet transfer method, spin-coat the PMMA solution after drying to flatten the graphene, and then dry it at 120 degrees Celsius for 5 minutes. Soak in acetone for 3 times, each time for 15 minutes, soak in isopropanol for 5 minutes to wash away PMMA, and obtain substrate / graphene. Then, using the molecular beam epitaxy growth process, the temperature of the substrate / graphene is controlled at 950°C, the rotation speed of the substrate / graphene is 10r / min, and the equivalent pressure of the Ga beam is 2×10 -7 Torr, In beam equivalent pressure is 3.5×10 -8 Torr, the nitrogen flow rate is 2 sccm, the plasma source power is 400W, and the growth time is 3h, and the In atoms of the ob...

Embodiment 3

[0058] A construction of an unbiased photoelectrochemical hydrogen production system based on InGaN nanocolumn photoelectrodes on graphene, comprising the following steps:

[0059] (1) Preparation of photoanode: Use sapphire as the substrate, transfer three layers of graphene film on the substrate by wet transfer method, after drying, spin-coat PMMA solution to flatten the graphene, dry at 120 degrees Celsius for 5 minutes, and then sequentially Soak in acetone for 3 times, each time for 15 minutes, soak in isopropanol for 5 minutes to wash away PMMA, and obtain substrate / graphene. Then, using the molecular beam epitaxy growth process, the temperature of the substrate / graphene is controlled at 900°C, the rotation speed of the substrate / graphene is 10r / min, and the equivalent pressure of the Ga beam is 2.5×10 - 7 Torr, In beam equivalent pressure is 5×10 -8 Torr, the flow rate of nitrogen gas is 2 sccm, the power of the plasma source is 400W, and the growth time is 3h, and th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses an unbiased photoelectrochemical hydrogen production system based on an InGaN nanorod photoelectrode on graphene and application thereof. The system comprises a photo-anode, a photo-cathode, an electrolyte, a light source and an electrolytic tank, the photo-anode structure sequentially comprises a substrate, graphene on the substrate and an InGaN nano column growing on the graphene from bottom to top, and the photo-cathode structure sequentially comprises a substrate and an InGaN nano column growing on the substrate from top to bottom; graphene is used so that the selection range of the substrate is widened, the graphene can be used as a conductive electrode, and the cost is reduced; a Schottky barrier can be formed between the graphene and the nanorod so that photon-generated carriers can be separated, the carrier transport performance can be enhanced, and the photoelectric property of the nanorod can be greatly improved; meanwhile, due to the light transmission of the graphene, the InGaN nanorod integrated photoelectrode can be prepared, spectral absorption can be widened, the photovoltage needed by water decomposition can be improved, and unbiased photoelectric water decomposition hydrogen production is achieved.

Description

technical field [0001] The invention relates to the fields of integration, energy and catalysis of InGaN nanocolumns and photoelectrodes, and in particular to an unbiased photoelectrochemical hydrogen production system and application based on InGaN nanocolumn photoelectrodes on graphene. Background technique [0002] Unbiased photoelectrochemical water splitting for hydrogen production has shown great potential in solving global energy crisis and environmental problems. InGaN nanocolumns have tunable bandgap (0.65eV ~ 3.4eV), which can adjust light absorption by changing the composition of indium, thus becoming an ideal choice for photoelectrodes. In addition, InGaN nanopillars have suitable energy band positions for water redox reactions, long charge diffusion distance, high surface area to volume ratio, and excellent theoretical solar-to-hydrogen (STH) efficiency (~27%), making InGaN nanopillars very Favorable for photoelectrochemical water splitting. However, problems ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C25B1/04C25B1/55C25B11/053C25B11/091C23C16/34C23C16/50B82Y40/00
CPCC25B1/04C23C16/303C23C16/50B82Y40/00Y02E60/36Y02P20/133
Inventor 李国强刘乾湖林静曾庆浩张志杰莫由天邓曦
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com