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Improved silicon carbide raw material synthesis method

A synthesis method and technology of silicon carbide, applied in the direction of carbon compounds, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of reducing the average particle size and unsatisfactory raw materials

Active Publication Date: 2021-04-23
北京粤海金半导体技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The first purpose of the present invention is to solve the problem that there are often hard solids in the synthesized products in the prior art, or a certain amount of simple Si is attached to the surface of other particles, and the obtained raw materials are often unsatisfactory. A considerable amount of polytetrafluoroethylene is added to the powder and silicon powder. The second is to further improve the problem of the reaction atmosphere. In the prior art, Ar gas is used to reduce the temperature, which can reduce the particle size, but the application further finds that using a specific ratio Ar gas and helium gas can further enhance the dispersion and further reduce the average particle size

Method used

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Effect test

Embodiment 1

[0019] A silicon carbide raw material synthesis system, characterized in that it includes a coil 1, a quartz tube 2, an insulation cylinder 3, a raw material powder 4, a lower thermometer 5, an upper thermometer 6, and a graphite crucible 7. And synthesis furnace, mechanical pump, molecular pump, motor screw drive device 8.

[0020] Preferably, the insulation cylinder 3, the raw material powder 4, the lower thermometer 5, the upper thermometer 6, and the graphite crucible 7 are all located in the synthesis furnace.

[0021] The quartz tube 2 is located between the two sets of coils 1 and the insulation cylinder 3, the graphite crucible is located in the insulation cylinder, the raw material powder is located in the graphite crucible, the lower thermometer 5 is located under the insulation cylinder, and the upper thermometer 6 is located in the insulation cylinder above.

[0022] Described motor screw mandrel transmission device 8 comprises left motor 81, left screw mandrel 82...

Embodiment 2

[0026] A method for synthesizing silicon carbide raw materials: (1) Weigh carbon powder and silicon powder with a molar ratio of 1:1.01-1.10, and add 0.1%-0.5% polytetrafluoroethylene powder of the total weight of carbon powder and silicon powder, Mix and grind in the ball mill tank for more than 1 hour to obtain the mixture of step (1); (1A) carry out the test run step in advance, by recording the data of the starting position of the movement of the left motor and the right motor, the rotation of the motor and the moving distance of the two groups of coils (1) Quantitative relationship, prepare preset mobile program for PLC controller; (2) put step (1) mixture into graphite crucible, and put crucible into silicon carbide raw material synthesis furnace; (3) use mechanical pump and molecular pump to The pressure in the synthesis furnace is pumped down to below 10-2Pa, and heating is started. During the heating process, when the heating reaches 1400-1600°C, the position of the co...

Embodiment 3

[0028] A method for synthesizing a silicon carbide crystal raw material, the method comprising the following steps: first weighing a certain amount of carbon powder and silicon powder, putting them into a ball milling jar, then weighing an appropriate amount of polytetrafluoroethylene, adding them into the ball milling jar and mixing evenly ; (2) Put the above mixture into a graphite crucible, put the crucible into a silicon carbide raw material synthesis furnace, adjust the induction coil of the raw material synthesis furnace to a suitable position; (3) use a mechanical pump and a molecular pump to synthesize the silicon carbide raw material The pressure in the furnace is pumped to 10 -2 Below Pa, start heating, and after heating to an appropriate temperature, start to move the position of the induction coil; (4) After the heating is completed, pour a certain proportion of argon and helium into the chamber of the silicon carbide raw material synthesis furnace, and naturally co...

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Abstract

The invention discloses an improved silicon carbide raw material synthesis method. The invention mainly relates to the technical field of research and development of a synthesis process of SiC powder for growing single crystals, and mainly aims to achieve the purpose of improving the purity of a synthesized silicon carbide raw material by adding polytetrafluoroethylene into a mixture of carbon powder and silicon powder for synthesizing the silicon carbide raw material and utilizing the purification effect of polytetrafluoroethylene. Firstly, polytetrafluoroethylene is added and mixed, so that the raw materials are mixed more uniformly, and regional aggregation of carbon powder is greatly reduced. In the heating reaction process of raw material synthesis, the position of a coil is moved, so that the carbon powder and the silicon powder fully react, serious carbonization of the region due to the fact that the region is locally at an overhigh temperature all the time is avoided, and the purpose of increasing the yield of silicon carbide raw materials is achieved; and a certain proportion of helium is introduced in the cooling process, and the characteristic that the helium is high in heat conductivity is utilized, so that the cooling time is shortened. The production cost is reduced while the quality of the synthetic silicon carbide raw material is improved.

Description

technical field [0001] The invention relates to the field of derivative technology of crystal growth, in particular to an improved method for synthesizing silicon carbide raw materials. Background technique [0002] As a third-generation semiconductor material, silicon carbide has the properties of large band gap, high thermal conductivity, high saturated electron drift rate and high breakdown field strength, and has broad application prospects in the fields of high temperature, high frequency and high voltage. The quality of growing silicon carbide crystals is closely related to the quality of silicon carbide raw materials. At present, the mainstream method of synthesizing silicon carbide raw materials is the high-temperature self-propagating method. After the mixture of carbon powder and silicon powder is heated to a certain temperature, it reacts to form silicon carbide. By moving the induction coil position to adjust the temperature field distribution in the graphite cru...

Claims

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Application Information

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IPC IPC(8): C01B32/984
CPCY02P20/10
Inventor 葛明明鲍慧强赵然赵子强李龙远王增泽
Owner 北京粤海金半导体技术有限公司
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