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Photoresist film-forming resin and preparation method of photoresist composition

A film-forming resin and photoresist technology, applied in the field of photoresist, can solve the problems of low C/H ratio, less heat resistance and etching resistance than benzene ring structure, and poor film formation uniformity.

Active Publication Date: 2021-09-14
GANSU HUALONG SEMICON MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when (meth)acrylate derivatives are polymerized, the double bond in the acrylic monomer is very easy to polymerize, and the acid-sensitive group in the monomer is also easy to decompose, so the requirements for purification conditions are very strict. At the same time, the acrylate main chain is a linear structure, the C / H ratio is low, and the corrosion resistance is poor; the cycloolefin-maleic anhydride copolymer can distinguish 3nm lines, and in the best case, 1nm lines can be resolved, but its composition The uniformity of the film is not good; because the polynorbornene derivative is a pure alicyclic compound, its heat resistance and etching resistance are not as strong as the benzene ring structure

Method used

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  • Photoresist film-forming resin and preparation method of photoresist composition
  • Photoresist film-forming resin and preparation method of photoresist composition
  • Photoresist film-forming resin and preparation method of photoresist composition

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Experimental program
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preparation example Construction

[0054] (1) Preparation experiment of photoresist film-forming resin

[0055] 1. Discussion experiments on the dosage of different reaction monomers

Embodiment 1

[0058] A preparation method of photoresist film-forming resin, comprising the following steps:

[0059] (1) Add monomer A, monomer B, monomer C, compound emulsifier (sodium lauryl sulfate and fatty alcohol poly Oxyethylene ether with a volume ratio of 1:2) and 400ml of water, nitrogen gas was introduced to remove the oxygen in the reaction system, high-speed stirring, reflux, and the temperature was raised to 40°C for about 30 minutes to pre-emulsify to obtain a pre-emulsion; among them, Said monomer A is trifluoroethyl methacrylate, and the consumption is 33.6g; said monomer B is tert-butyl methacrylate, and the consumption is 159.9g; Monomer C is cyclopentyl methacrylate, and the consumption is is 15.3g; the molar ratio of monomer A, monomer B and monomer C is 2:3:1; the amount of the composite emulsifier is 4% of the sum of the mass of monomer A, monomer B and monomer C, which is 8.35g;

[0060] (2) Raise the temperature of the pre-emulsion in step (1) to 80°C, reduce the...

Embodiment 2

[0067] The content of embodiment 2 is basically the same as embodiment 1, the difference is:

[0068] In step (1), the monomer A is trifluoroethyl methacrylate, and the dosage is 16.8 g; the monomer B is tert-butyl methacrylate, and the dosage is 159.9 g; the monomer C is methyl Cyclopentyl acrylate, the dosage is 15.3 g; the molar ratio of monomer A, monomer B and monomer C is 1:3:1; the dosage of the composite emulsifier is monomer A, monomer B and monomer 4% of the total mass of C is 7.68g; in step (2), the amount of ammonium persulfate is 0.2% of the total mass of monomer A, monomer B and monomer C, which is 0.38g.

[0069] Finally, the weight-average molecular weight of the photoresist film-forming resin was measured to be 8644 g / mol, and the molecular weight distribution was 1.71.

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Abstract

The invention relates to the technical field of photoresist, and discloses a preparation method of a photoresist film-forming resin and a photoresist composition thereof. The present invention carries out copolymerization reaction derived from fluorine-containing acrylate monomer A, derived from cholic acid monomer B and derived from alicyclic acrylate monomer C, to prepare photoresist film-forming resin; the photoresist prepared from the resin It not only has strong etching resistance, but also greatly increases the adsorption and adhesion to the substrate. It is used in the 193nm immersion lithography process. Its best resolution can reach 0.13μm, and the image is clear and the edge roughness is good.

Description

technical field [0001] The invention relates to the technical field of photoresist, in particular to a photoresist film-forming resin and a method for preparing a photoresist composition thereof. Background technique [0002] Photoresist is a key material required for the production of integrated circuits. It develops with the development of integrated circuits and is constantly updated. According to Moore's Law: the integration level of integrated circuits doubles every 18 months, which makes the processing line width of integrated circuits shrink continuously, and the requirements for photoresist resolution continue to increase. Because the resolvable line width of the photoresist is proportional to the exposure wavelength and inversely proportional to the number of lens openings of the exposure machine, shortening the exposure wavelength is the main way to improve the resolution. Therefore, with the development of integrated circuits, the lithography process has also exp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08F220/28C08F220/24C08F220/18G03F7/004
Inventor 李永斌何龙龙
Owner GANSU HUALONG SEMICON MATERIAL TECH CO LTD
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