Photoresist structure, graphical deposition layer, semiconductor chip, and manufacturing methodd of photoresist structure, graphical deposition layer and semiconductor chip

Abstract

The embodiment of the invention provides a photoresist structure, a graphical deposition layer, a semiconductor chip, and manufacturing methods of the photoresist structure, the graphical deposition layer and the semiconductor chip. According to the manufacturing method of the photoresist structure, a single photoresist is utilized, the second photoresist layer containing the undercut can be obtained only by using a single developing solution for one-time development, and the size of the undercut can be controlled through the development time, so the problems of stripping difficulty and the like caused by adhesion of a deposition material and the side wall of the photoresist structure in a traditional stripping process are avoided; the first photoresist layer is used as a protective adhesive layer, so that corrosion damage of a developing solution to a substrate material during development can be avoided; and the first photoresist layer is etched, so that the first photoresist layer serving as a protective adhesive layer is converted into a pattern limiting adhesive layer, lateral diffusion at the bottom of a deposition material can be effectively prevented in the material deposition process, and the deposition layer with good morphology is obtained.

Description

technical field [0001] The invention relates to the technical field of micro-nano processing, in particular to a photoresist structure, a patterned deposition layer, a semiconductor chip and a manufacturing method thereof. Background technique [0002] In the field of micro-nano processing technology, most of the processing technology, such as lift-off technology, needs to be realized by preparing a special photoresist structure. [0003] Taking the lift-off process as an example, the following problems have always existed in the traditional technology: first, the sidewall of the deposition material is easy to adhere to the sidewall of the photoresist, resulting in poor morphology of the patterned deposition layer; second, the photoresist pattern During the chemicalization process, the developer will react with the substrate material and cause corrosion to the substrate material. [0004] For the first problem, it can usually be solved by preparing a photoresist structure c...

AI Technical Summary

Problems solved by technology

[0003] Taking the lift-off process as an example, the following problems have always existed in the traditional technology: first, the sidewall of the deposition material is easy to adhere to the sidewall of the photoresist, resulting in poor morphology of the patterned deposition layer; second, the photoresist pattern During the chemicalization process, the developer will react with the substrate material and cause corrosion to the substrate material

[0004] For the first problem, it can usually be solved by preparing a photoresist structure containing undercuts, but the photoresist structure containing undercuts makes the bottom of the deposition material prone to lateral diffusion, resulting in the actual size of the patterned deposition layer does not match the defined size

[0005] For the second problem, in the traditional technical solution, it can only be solved by selecting a photoresist that uses a developer that does not react with the substrate material, but this will reduce the compatibility of the process

Images